Inventor
WADA MITSUGU
JP21 patents
⚠️ This page may combine multiple inventors who share the name “WADA MITSUGU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJI PHOTO FILM CO LTD
14 patentsUS6709513B2Mar 23, 2004
Substrate including wide low-defect region for use in semiconductor element
FUJI PHOTO FILM CO LTD19 citations92
US6127691AOct 3, 2000
Semiconductor laser device
FUJI PHOTO FILM CO LTD41 citations92
US6028874AFeb 22, 2000
Semiconductor laser
FUJI PHOTO FILM CO LTD26 citations92
US5995528ANov 30, 1999
Semiconductor laser
FUJI PHOTO FILM CO LTD38 citations92
US6535536B2Mar 18, 2003
Semiconductor laser element
FUJI PHOTO FILM CO LTD13 citations84
US6516016B1Feb 4, 2003
High-power semiconductor laser device having current confinement structure and index-guided structure, and oscillating in transverse mode
FUJI PHOTO FILM CO LTD19 citations84
US6876688B1Apr 5, 2005
Semiconductor laser and method of manufacturing the same
FUJI PHOTO FILM CO LTD11 citations74
US6625190B1Sep 23, 2003
Semiconductor laser device having thickened impurity-doped aluminum-free optical waveguide layers
FUJI PHOTO FILM CO LTD8 citations74
US6400743B1Jun 4, 2002
High-power semiconductor laser device having current confinement structure and index-guided structure
FUJI PHOTO FILM CO LTD13 citations74
US6285695B1Sep 4, 2001
Semiconductor laser
FUJI PHOTO FILM CO LTD14 citations74
US6973109B2Dec 6, 2005
Semiconductor laser device having strain buffer layer between compressive-strain quantum well layer and tensile-strain barrier layer
FUJI PHOTO FILM CO LTD5 citations63
US6600770B2Jul 29, 2003
High-power semiconductor laser device having current confinement structure and index-guided structure and stably oscillating in single mode
FUJI PHOTO FILM CO LTD2 citations63
US6797416B2Sep 28, 2004
GaN substrate formed under controlled growth condition over GaN layer having discretely formed pits
FUJI PHOTO FILM CO LTD4 citations62
US6553046B2Apr 22, 2003
High-power semiconductor laser device including resistance reduction layer which has intermediate energy gap
FUJI PHOTO FILM CO LTD1 citations48
NIKKISO CO LTD
6 patentsUS11367807B2Jun 21, 2022
Nitride semiconductor light-emitting element
NIKKISO CO LTD27 citations93
US11444222B2Sep 13, 2022
Nitride semiconductor light-emitting element and production method for nitride semiconductor light-emitting element
NIKKISO CO LTD4 citations72
US11227974B2Jan 18, 2022
Nitride semiconductor light-emitting element and production method for nitride semiconductor light-emitting element
NIKKISO CO LTD4 citations72
US11616167B2Mar 28, 2023
Nitride semiconductor light-emitting element and method for manufacturing nitride semiconductor light-emitting element
NIKKISO CO LTD1 citations61
US12300762B2May 13, 2025
Semiconductor light-emitting element and method for manufacturing semiconductor light-emitting element
NIKKISO CO LTD0 citations54
US11824137B2Nov 21, 2023
Semiconductor light-emitting element and method for manufacturing semiconductor light-emitting element
NIKKISO CO LTD0 citations54