Inventor
LINDOLF JUERGEN
DE25 patents
⚠️ This page may combine multiple inventors who share the name “LINDOLF JUERGEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
21 patentsUS6930324B2Aug 16, 2005
Device architecture and process for improved vertical memory arrays
INFINEON TECHNOLOGIES AG99 citations96
US6445630B2Sep 3, 2002
Method for carrying out a burn-in process for electrically stressing a semiconductor memory
INFINEON TECHNOLOGIES AG19 citations87
US6501283B2Dec 31, 2002
Circuit configuration for measuring the capacitance of structures in an integrated circuit
INFINEON TECHNOLOGIES AG23 citations86
US6756655B2Jun 29, 2004
Fuse for a semiconductor configuration and method for its production
INFINEON TECHNOLOGIES AG19 citations84
US6458631B1Oct 1, 2002
Method for fabricating an integrated circuit, in particular an antifuse
INFINEON TECHNOLOGIES AG17 citations83
US6768139B2Jul 27, 2004
Transistor configuration for a bandgap circuit
INFINEON TECHNOLOGIES AG10 citations74
US6721215B2Apr 13, 2004
Integrated dynamic memory and method for operating it
INFINEON TECHNOLOGIES AG9 citations74
US6600680B2Jul 29, 2003
Circuit configuration and method for determining a time constant of a storage capacitor of a memory cell in a semiconductor memory
INFINEON TECHNOLOGIES AG8 citations74
US6552549B1Apr 22, 2003
Method of reading electrical fuses/antifuses
INFINEON TECHNOLOGIES AG9 citations74
US6614243B2Sep 2, 2003
Measurement probe for detecting electrical signals in an integrated semiconductor circuit
INFINEON TECHNOLOGIES AG11 citations73
US6456553B1Sep 24, 2002
Circuit configuration for switching over a receiver circuit in particular in DRAM memories and DRAM memory having the circuit configuration
INFINEON TECHNOLOGIES AG11 citations73
US7126204B2Oct 24, 2006
Integrated semiconductor circuit with an electrically programmable switching element
INFINEON TECHNOLOGIES AG9 citations72
US6838724B2Jan 4, 2005
Transistor array and semiconductor memory configuration fabricated with the transistor array
INFINEON TECHNOLOGIES AG9 citations72
US6429503B2Aug 6, 2002
Connection element in an integrated circuit having a layer structure disposed between two conductive structures
INFINEON TECHNOLOGIES AG13 citations71
US7317603B2Jan 8, 2008
Integrated circuit with electrostatic discharge protection
INFINEON TECHNOLOGIES AG4 citations63
US6449206B2Sep 10, 2002
Semiconductor circuit configuration
INFINEON TECHNOLOGIES AG2 citations62
US6417722B1Jul 9, 2002
Sense amplifier configuration having a field-effect transistor having a short channel length and an adjustable threshold voltage
INFINEON TECHNOLOGIES AG3 citations62
US6917208B2Jul 12, 2005
Method and test structure for determining resistances at a plurality of interconnected resistors in an integrated circuit
INFINEON TECHNOLOGIES AG6 citations58
US6919234B2Jul 19, 2005
Method for producing an antifuse in a substrate and an antifuse structure for integration in a substrate
INFINEON TECHNOLOGIES AG0 citations52
US6788129B2Sep 7, 2004
Integrated circuit having a programmable element and method of operating the circuit
INFINEON TECHNOLOGIES AG0 citations52
US6930325B2Aug 16, 2005
Test structure for improved vertical memory arrays
INFINEON TECHNOLOGIES AG0 citations40
SIEMENS AG
3 patentsUS6717200B1Apr 6, 2004
Vertical field effect transistor with internal annular gate and method of production
SIEMENS AG75 citations98
US6181624B1Jan 30, 2001
Integrated circuit memory having a sense amplifier activated based on word line potentials
SIEMENS AG8 citations74
US6125073ASep 26, 2000
Integrated semiconductor memory
SIEMENS AG9 citations73