Inventor
KAWAMURA KEISUKE
JP26 patents
⚠️ This page may combine multiple inventors who share the name “KAWAMURA KEISUKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI HEAVY IND LTD
7 patentsUS6007681ADec 28, 1999
Apparatus and method for treating exhaust gas and pulse generator used therefor
MITSUBISHI HEAVY IND LTD57 citations95
US7141516B2Nov 28, 2006
High frequency plasma generator and high frequency plasma generating method
MITSUBISHI HEAVY IND LTD20 citations92
US7205034B2Apr 17, 2007
Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus
MITSUBISHI HEAVY IND LTD38 citations88
US7833587B2Nov 16, 2010
Method for plasma-enhanced chemical vapor deposition and apparatus for plasma-enhanced chemical vapor deposition
MITSUBISHI HEAVY IND LTD16 citations84
US7319295B2Jan 15, 2008
High-frequency power supply structure and plasma CVD device using the same
MITSUBISHI HEAVY IND LTD15 citations83
US6344701B1Feb 5, 2002
Pulse generator for treating exhaust gas
MITSUBISHI HEAVY IND LTD6 citations73
US6274006B1Aug 14, 2001
Apparatus and method for treating exhaust gas and pulse generator used therefor
MITSUBISHI HEAVY IND LTD7 citations73
AIR WATER INC
6 patentsUS10186421B2Jan 22, 2019
Composite semiconductor substrate
AIR WATER INC10 citations81
US11316018B2Apr 26, 2022
Compound semiconductor substrate including electron transition layer and barrier layer
AIR WATER INC2 citations70
US12490486B2Dec 2, 2025
Compound semiconductor substrate and method for manufacturing compound semiconductor substrate
AIR WATER INC0 citations59
US12230679B2Feb 18, 2025
Compound semiconductor substrate including nitride semiconductor layer having varying threading dislocation densities
AIR WATER INC0 citations44
US12087852B2Sep 10, 2024
Compound semiconductor device, compound semiconductor substrate, and method for manufacturing compound semiconductor device
AIR WATER INC0 citations41
US10354864B2Jul 16, 2019
Compound semiconductor substrate with SiC layer
AIR WATER INC0 citations39
NIPPON STEEL CORP
4 patentsUS7204887B2Apr 17, 2007
Wafer holding, wafer support member, wafer boat and heat treatment furnace
NIPPON STEEL CORP581 citations98
US7067402B2Jun 27, 2006
Production method for SIMOX substrate and SIMOX substrate
NIPPON STEEL CORP21 citations90
US6617034B1Sep 9, 2003
SOI substrate and method for production thereof
NIPPON STEEL CORP16 citations82
US6767801B2Jul 27, 2004
Simox substrate and method for production thereof
NIPPON STEEL CORP6 citations62
MITSUBISHI MOTORS CORP
2 patentsHONDA MOTOR CO LTD
2 patentsKAWAMURA KEISUKE
2 patentsUS8563442B2Oct 22, 2013
Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal SiC substrate and single crystal SiC substrate
KAWAMURA KEISUKE0 citations42
US8931432B2Jan 13, 2015
Vacuum processing apparatus
KAWAMURA KEISUKE0 citations36