Inventor
KANG KYUNG-WOO
KR16 patents
Patents
16 patentsUS6178135B1Jan 23, 2001
Multi-bank memory devices having bank selection switches therein that enable efficient sense amplifier utilization
SAMSUNG ELECTRONICS CO LTD143 citations98
US6791888B2Sep 14, 2004
Semiconductor memory device having preamble function
SAMSUNG ELECTRONICS CO LTD29 citations92
US6285611B1Sep 4, 2001
Memory device having input and output sense amplifiers that occupy less circuit area
SAMSUNG ELECTRONICS CO LTD32 citations92
US6087851AJul 11, 2000
Method and apparatus for configuring a semiconductor device for compatibility with multiple logic interfaces
SAMSUNG ELECTRONICS CO LTD23 citations92
US6020761AFeb 1, 2000
Input buffers and controlling methods for integrated circuit memory devices that operate with low voltage transistor-transistor logic (LVTTL) and with stub series terminated transceiver logic (SSTL)
SAMSUNG ELECTRONICS CO LTD26 citations92
US5566116AOct 15, 1996
Bit line sense amplifier of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD24 citations92
US5410262AApr 25, 1995
Data output buffer of a semiconductor integrated circuit
SAMSUNG ELECTRONICS CO LTD33 citations92
US5299168AMar 29, 1994
Circuit for detecting refresh address signals of a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD42 citations92
US5737276AApr 7, 1998
Memory device with fast extended data out (EDO) mode and methods of operation therefor
SAMSUNG ELECTRONICS CO LTD34 citations90
US6696860B2Feb 24, 2004
Variable voltage data buffers
SAMSUNG ELECTRONICS CO LTD17 citations84
US6847576B2Jan 25, 2005
Layout structures of data input/output pads and peripheral circuits of integrated circuit memory devices
SAMSUNG ELECTRONICS CO LTD8 citations73
US6847567B2Jan 25, 2005
Sense amplifier drive circuits responsive to predecoded column addresses and methods for operating the same
SAMSUNG ELECTRONICS CO LTD7 citations73
US6278650B1Aug 21, 2001
Semiconductor memory device capable of keeping sensing efficiency of data line sense amplifier uniform
SAMSUNG ELECTRONICS CO LTD10 citations73
US6094376AJul 25, 2000
Data output buffer control circuit for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD7 citations71
US6826108B2Nov 30, 2004
Integrated circuit memory device power supply circuits and methods of operating same
SAMSUNG ELECTRONICS CO LTD6 citations62
US6104662AAug 15, 2000
Data masking systems and methods for integrated circuit memory devices including pulse-responsive equalizers and prechargers
SAMSUNG ELECTRONICS CO LTD3 citations60