Inventor
ICHIMORI TAKASHI
JP10 patents
⚠️ This page may combine multiple inventors who share the name “ICHIMORI TAKASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
OKI ELECTRIC IND CO LTD
7 patentsUS6531743B1Mar 11, 2003
SOI MOS field effect transistor and manufacturing method therefor
OKI ELECTRIC IND CO LTD15 citations91
US6750088B2Jun 15, 2004
SOI MOS field effect transistor and manufacturing method therefor
OKI ELECTRIC IND CO LTD10 citations72
US6274470B1Aug 14, 2001
Method for fabricating a semiconductor device having a metallic silicide layer
OKI ELECTRIC IND CO LTD14 citations72
US6861322B2Mar 1, 2005
Method of manufacturing a semiconductor device
OKI ELECTRIC IND CO LTD4 citations62
US7244996B2Jul 17, 2007
Structure of a field effect transistor having metallic silicide and manufacturing method thereof
OKI ELECTRIC IND CO LTD3 citations61
US7405439B2Jul 29, 2008
Memory cell structure and semiconductor memory device
OKI ELECTRIC IND CO LTD2 citations60
US7479682B2Jan 20, 2009
Structure of a field effect transistor having metallic silicide and manufacturing method thereof
OKI ELECTRIC IND CO LTD0 citations50
ICHIMORI TAKASHI
3 patentsUS8917929B2Dec 23, 2014
Image processing apparatus, method, program, and recording medium
ICHIMORI TAKASHI3 citations58
US9407305B2Aug 2, 2016
Instruction beam detection apparatus and method of detecting instruction beam
ICHIMORI TAKASHI0 citations37
US8183643B2May 22, 2012
Semiconductor device having silicide layer completely occupied amorphous layer formed in the substrate and an interface junction of (111) silicon plane
ICHIMORI TAKASHI0 citations37