Inventor
KAKAMU KATSUMI
JP17 patents
⚠️ This page may combine multiple inventors who share the name “KAKAMU KATSUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
BROTHER IND LTD
10 patentsUS10944042B2Mar 9, 2021
Piezoelectric actuator and method for manufacturing piezoelectric actuator
BROTHER IND LTD2 citations72
US11130336B2Sep 28, 2021
Liquid ejection head
BROTHER IND LTD0 citations61
US10960668B2Mar 30, 2021
Liquid discharge head and liquid discharge apparatus
BROTHER IND LTD0 citations51
US10377138B2Aug 13, 2019
Method for producing liquid discharge apparatus
BROTHER IND LTD0 citations51
US10205086B2Feb 12, 2019
Piezoelectric actuator and method for manufacturing piezoelectric actuator
BROTHER IND LTD0 citations51
US9610771B2Apr 4, 2017
Liquid discharge apparatus and method for producing the same
BROTHER IND LTD0 citations51
US11155088B2Oct 26, 2021
Liquid ejection head
BROTHER IND LTD0 citations50
US10864735B2Dec 15, 2020
Liquid ejection head
BROTHER IND LTD0 citations40
US10857796B2Dec 8, 2020
Liquid ejection head and liquid ejection device
BROTHER IND LTD0 citations40
US9340025B2May 17, 2016
Method for producing liquid discharge apparatus, liquid discharge apparatus, and method for forming liquid repellent layer
BROTHER IND LTD0 citations37
FUJITSU LTD
7 patentsUS6885105B2Apr 26, 2005
Semiconductor device with copper wirings
FUJITSU LTD20 citations92
US6211570B1Apr 3, 2001
Semiconductor device having a multilayer interconnection structure
FUJITSU LTD20 citations91
US6777323B2Aug 17, 2004
Lamination structure with copper wiring and its manufacture method
FUJITSU LTD14 citations83
US7030498B2Apr 18, 2006
Semiconductor device with copper wirings having improved negative bias temperature instability (NBTI)
FUJITSU LTD10 citations73
US6794693B2Sep 21, 2004
Semiconductor device and manufacturing method thereof
FUJITSU LTD9 citations73
US6455444B2Sep 24, 2002
Semiconductor device having a multilayer interconnection structure
FUJITSU LTD2 citations61
US6878619B2Apr 12, 2005
Method for fabricating semiconductor device
FUJITSU LTD1 citations51