Inventor

KARLSSON OLOV

US40 patents

⚠️ This page may combine multiple inventors who share the name “KARLSSON OLOV”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KARLSSON OLOV

ADVANCED MICRO DEVICES INC

MOSFETs with differing gate dielectrics and method of formation

Stepper alignment mark structure for maintaining alignment integrity

Shallow trench isolation formation without planarization mask

Shallow trench isolation formation with reduced polish stop thickness

High-K dielectric having barrier layer for P-doped devices and method of fabrication

Semiconductor device and fabrication technique using a high-K liner for spacer etch stop

Shallow trench isolation formation with ion implantation

Shallow trench isolation formation with spacer-assisted ion implantation

Shallow trench isolation with spacers for improved gate oxide quality

Shallow trench isolation formation with simplified reverse planarization mask

Gate pattern formation using a BARC as a hardmask

Shallow trench isolation formation with trench wall spacer

Stepper alignment mark structure for maintaining alignment integrity

Heat treating nitrogen implanted gate electrode layer for improved gate electrode etch profile

Fabrication of a gate structures having a longer length toward the top for formation of a rectangular shaped spacer

Shallow trench isolation formation with improved trench edge oxide

Simplified shallow trench isolation formation with no polish stop

Shallow trench isolation formation with two source/drain masks and simplified planarization mask

Semiconductor device with silicide source/drain and high-K dielectric

Method for generating limited isolation trench width structures and a device having a narrow isolation trench surrounding its periphery

Shallow trench isolation formation with no polish stop

Shallow trench isolation formation with simplified reverse planarization mask

INTERMOLECULAR INC

High dose ion-implanted photoresist removal using organic solvent and transition metal mixtures

Aqua regia and hydrogen peroxide HCL combination to remove Ni and NiPt residues

Aqua regia and hydrogen peroxide HCI combination to remove Ni and NiPt residues

Aqua regia and hydrogen peroxide HCl combination to remove Ni and NiPt residues

Process to remove Ni and Pt residues for NiPtSi application using chlorine gas

Method of forming an erbium silicide metal gate stack FinFET device via a physical vapor deposition nanolaminate approach

DUONG ANH

Aqua regia and hydrogen peroxide HCl combination to remove Ni and NiPt residues

Process to remove Ni and Pt residues for NiPtSi applications

Process to remove Ni and Pt residues for NiPtSi applications using aqua regia with microwave assisted heating

Process to remove Ni and Pt residues for NiPtSi applications using chlorine gas

Method for cleaning platinum residues on a semiconductor substrate

GLOBALFOUNDRIES INC

Methods of forming gate structures for transistor devices for CMOS applications

Gate structures for transistor devices for CMOS applications and products

Methods for fabricating integrated circuits including fluorine incorporation

JOSHI AMOL

High productivity combinatorial oxide terracing and PVD/ALD metal deposition combined with lithography for gate work function extraction

Circular transmission line methods compatible with combinatorial processing of semiconductors

WESTERMARK ULLA

Lignocellulose product

DAHLIN JOHAN

Variable-size bed