Inventor
ZHAO XIAOYE
US24 patents
⚠️ This page may combine multiple inventors who share the name “ZHAO XIAOYE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
20 patentsUS6894245B2May 17, 2005
Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
APPLIED MATERIALS INC108 citations99
US7575007B2Aug 18, 2009
Chamber recovery after opening barrier over copper
APPLIED MATERIALS INC197 citations98
US7030335B2Apr 18, 2006
Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
APPLIED MATERIALS INC72 citations98
US6586886B1Jul 1, 2003
Gas distribution plate electrode for a plasma reactor
APPLIED MATERIALS INC115 citations98
US7132618B2Nov 7, 2006
MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
APPLIED MATERIALS INC43 citations96
US6921727B2Jul 26, 2005
Method for modifying dielectric characteristics of dielectric layers
APPLIED MATERIALS INC61 citations94
US6153530ANov 28, 2000
Post-etch treatment of plasma-etched feature surfaces to prevent corrosion
APPLIED MATERIALS INC58 citations94
US7132369B2Nov 7, 2006
Method of forming a low-K dual damascene interconnect structure
APPLIED MATERIALS INC27 citations92
US7115517B2Oct 3, 2006
Method of fabricating a dual damascene interconnect structure
APPLIED MATERIALS INC32 citations92
US6677712B2Jan 13, 2004
Gas distribution plate electrode for a plasma receptor
APPLIED MATERIALS INC22 citations92
US7300597B2Nov 27, 2007
Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material
APPLIED MATERIALS INC18 citations91
US7541292B2Jun 2, 2009
Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones
APPLIED MATERIALS INC12 citations84
US7540971B2Jun 2, 2009
Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content
APPLIED MATERIALS INC16 citations84
US7431859B2Oct 7, 2008
Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation
APPLIED MATERIALS INC18 citations84
US7186943B2Mar 6, 2007
MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
APPLIED MATERIALS INC12 citations84
US7435685B2Oct 14, 2008
Method of forming a low-K dual damascene interconnect structure
APPLIED MATERIALS INC13 citations83
US7309448B2Dec 18, 2007
Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material
APPLIED MATERIALS INC10 citations82
US7256134B2Aug 14, 2007
Selective etching of carbon-doped low-k dielectrics
APPLIED MATERIALS INC16 citations82
US7413990B2Aug 19, 2008
Method of fabricating a dual damascene interconnect structure
APPLIED MATERIALS INC6 citations74
US8048806B2Nov 1, 2011
Methods to avoid unstable plasma states during a process transition
APPLIED MATERIALS INC5 citations62