Inventor
FUJIWARA ICHIRO
JP40 patents
⚠️ This page may combine multiple inventors who share the name “FUJIWARA ICHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SONY CORP
31 patentsUS5999444ADec 7, 1999
Nonvolatile semiconductor memory device and writing and erasing method of the same
SONY CORP353 citations99
US6674120B2Jan 6, 2004
Nonvolatile semiconductor memory device and method of operation thereof
SONY CORP85 citations98
US6434053B1Aug 13, 2002
Nonvolatile semiconductor memory device and method of operation thereof
SONY CORP149 citations98
US5777977AJul 7, 1998
Recording and reproducing apparatus
SONY CORP113 citations98
US6906390B2Jun 14, 2005
Nonvolatile semiconductor storage and method for manufacturing the same
SONY CORP88 citations97
US6949788B2Sep 27, 2005
Nonvolatile semiconductor memory device and method for operating the same
SONY CORP62 citations96
US6891262B2May 10, 2005
Semiconductor device and method of producing the same
SONY CORP47 citations96
US6717860B1Apr 6, 2004
Method of erasing non-volatile semiconductor memory device and such non-volatile semiconductor memory device
SONY CORP51 citations96
US6301155B1Oct 9, 2001
Non-volatile semiconductor memory device and method of reading same
SONY CORP66 citations96
US6191445B1Feb 20, 2001
Nonvolatile semiconductor memory device and method of reading a data therefrom
SONY CORP58 citations96
US7521751B2Apr 21, 2009
Nonvolatile memory device
SONY CORP25 citations92
US7259433B2Aug 21, 2007
Non-volatile semiconductor memory device and method for producing same
SONY CORP18 citations92
US7075143B2Jul 11, 2006
Apparatus and method for high sensitivity read operation
SONY CORP25 citations92
US6903977B2Jun 7, 2005
Nonvolatile semiconductor memory device and method of producing the same
SONY CORP12 citations92
US6872614B2Mar 29, 2005
Nonvolatile semiconductor memory device and process of production and write method thereof
SONY CORP20 citations92
US6870765B2Mar 22, 2005
Method of erasing non-volatile semiconductor memory device and such non-volatile semiconductor memory device
SONY CORP40 citations92
US6794712B1Sep 21, 2004
Nonvolatile semiconductor memory device and process of production and write method thereof
SONY CORP26 citations92
US6721205B2Apr 13, 2004
Nonvolatile semiconductor memory device and methods for operating and producing the same
SONY CORP48 citations92
US6541326B2Apr 1, 2003
Nonvolatile semiconductor memory device and process of production and write method thereof
SONY CORP19 citations92
US6525379B2Feb 25, 2003
Memory device, method of manufacturing the same, and integrated circuit
SONY CORP26 citations92
US7227255B2Jun 5, 2007
Semiconductor device and method of producing the same
SONY CORP10 citations84
US7142451B2Nov 28, 2006
Nonvolatile semiconductor memory apparatus and method of producing the same
SONY CORP9 citations74
US7049180B2May 23, 2006
Method of fabricating a memory transistor array utilizing insulated word lines as gate electrodes
SONY CORP9 citations74
US7145808B2Dec 5, 2006
Nonvolatile semiconductor memory apparatus and method of producing the same
SONY CORP3 citations63
US7102931B2Sep 5, 2006
Nonvolatile semiconductor memory apparatus and method of producing the same
SONY CORP1 citations63
US7088622B2Aug 8, 2006
Nonvolatile semiconductor memory apparatus and method of producing the same
SONY CORP2 citations63
US7919806B2Apr 5, 2011
Nonvolatile semiconductor memory device and fabrication method therefor
SONY CORP6 citations62
US7012329B2Mar 14, 2006
Memory transistor array utilizing insulated word lines as gate electrodes
SONY CORP0 citations52
US10074690B2Sep 11, 2018
Semiconductor device and method of manufacturing the same
SONY CORP0 citations51
US9502467B2Nov 22, 2016
Semiconductor device and method of manufacturing the same
SONY CORP0 citations51
US8685786B2Apr 1, 2014
Method of manufacturing a semiconductor memory device having a resistance change memory layer
SONY CORP0 citations51