Inventor
KWON OH-JUNG
US39 patents
⚠️ This page may combine multiple inventors who share the name “KWON OH-JUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
18 patentsUS6884715B1Apr 26, 2005
Method for forming a self-aligned contact with a silicide or damascene conductor and the structure formed thereby
IBM40 citations93
US8354675B2Jan 15, 2013
Enhanced capacitance deep trench capacitor for EDRAM
IBM20 citations92
US7030012B2Apr 18, 2006
Method for manufacturing tungsten/polysilicon word line structure in vertical DRAM
IBM49 citations92
US8377790B2Feb 19, 2013
Method of fabricating an embedded polysilicon resistor and an embedded eFuse isolated from a substrate
IBM7 citations84
US7521763B2Apr 21, 2009
Dual stress STI
IBM14 citations84
US7288821B2Oct 30, 2007
Structure and method of three dimensional hybrid orientation technology
IBM17 citations84
US7153737B2Dec 26, 2006
Self-aligned, silicided, trench-based, DRAM/EDRAM processes with improved retention
IBM11 citations82
US9870960B2Jan 16, 2018
Capacitance monitoring using X-ray diffraction
IBM2 citations72
US8021982B2Sep 20, 2011
Method of silicide formation by adding graded amount of impurity during metal deposition
IBM4 citations63
US7927968B2Apr 19, 2011
Dual stress STI
IBM2 citations63
US7564086B2Jul 21, 2009
Self-aligned, silicided, trench-based DRAM/eDRAM processes with improved retention
IBM5 citations57
US9087927B2Jul 21, 2015
Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches
IBM0 citations52
US8963283B2Feb 24, 2015
Method of fabricating isolated capacitors and structure thereof
IBM0 citations52
US8940617B2Jan 27, 2015
Method of fabricating isolated capacitors and structure thereof
IBM0 citations52
US7670901B2Mar 2, 2010
Method of fabricating a bottle trench and a bottle trench capacitor
IBM0 citations52
US7387930B2Jun 17, 2008
Method of fabricating a bottle trench and a bottle trench capacitor
IBM0 citations52
US10008421B2Jun 26, 2018
Capacitance monitoring using x-ray diffraction
IBM0 citations51
US9240452B2Jan 19, 2016
Array and moat isolation structures and method of manufacture
IBM1 citations51
GLOBALFOUNDRIES INC
4 patentsUS10170304B1Jan 1, 2019
Self-aligned nanotube structures
GLOBALFOUNDRIES INC3 citations71
US10192887B2Jan 29, 2019
Method to improve crystalline regrowth
GLOBALFOUNDRIES INC1 citations55
US9269607B2Feb 23, 2016
Wafer stress control with backside patterning
GLOBALFOUNDRIES INC1 citations49
US9853055B2Dec 26, 2017
Method to improve crystalline regrowth
GLOBALFOUNDRIES INC0 citations44
KWON OH-JUNG
3 patentsUS8652925B2Feb 18, 2014
Method of fabricating isolated capacitors and structure thereof
KWON OH-JUNG4 citations83
US8293625B2Oct 23, 2012
Structure and method for hard mask removal on an SOI substrate without using CMP process
KWON OH-JUNG4 citations62
US8716776B2May 6, 2014
Method of fabricating isolated capacitors and structure thereof
KWON OH-JUNG3 citations61
SAMSUNG ELECTRONICS CO LTD
3 patentsUS7863201B2Jan 4, 2011
Methods of forming field effect transistors having silicided source/drain contacts with low contact resistance
SAMSUNG ELECTRONICS CO LTD4 citations61
US7902082B2Mar 8, 2011
Method of forming field effect transistors using diluted hydrofluoric acid to remove sacrificial nitride spacers
SAMSUNG ELECTRONICS CO LTD5 citations60
US8030196B2Oct 4, 2011
Transistor formation using capping layer
SAMSUNG ELECTRONICS CO LTD0 citations50