Inventor
YOKOUCHI NORIYUKI
JP26 patents
⚠️ This page may combine multiple inventors who share the name “YOKOUCHI NORIYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FURUKAWA ELECTRIC CO LTD
24 patentsUS6700914B2Mar 2, 2004
Vertical cavity surface emitting laser device
FURUKAWA ELECTRIC CO LTD31 citations89
US8837869B2Sep 16, 2014
SOA-PLC hybrid integrated polarization diversity circuit and method for manufacturing the same
FURUKAWA ELECTRIC CO LTD9 citations84
US7561765B2Jul 14, 2009
Optical integrated circuit and optical integrated circuit module
FURUKAWA ELECTRIC CO LTD14 citations84
US7368316B2May 6, 2008
Surface-emission semiconductor laser device
FURUKAWA ELECTRIC CO LTD16 citations84
US6430203B1Aug 6, 2002
Semiconductor laser device with non-oxidized facet regions
FURUKAWA ELECTRIC CO LTD16 citations84
US6914925B2Jul 5, 2005
Vertical cavity surface emitting semiconductor laser device
FURUKAWA ELECTRIC CO LTD16 citations83
US6839369B2Jan 4, 2005
Surface emitting semiconductor laser device
FURUKAWA ELECTRIC CO LTD13 citations83
US7618201B2Nov 17, 2009
Optical module
FURUKAWA ELECTRIC CO LTD10 citations80
US6900475B2May 31, 2005
Surface-emission semiconductor laser device
FURUKAWA ELECTRIC CO LTD9 citations73
US5973339AOct 26, 1999
Semiconductor photodetector having an optical attenuator
FURUKAWA ELECTRIC CO LTD10 citations73
US5666375ASep 9, 1997
Semiconductor quantum well laser having a low threshold current density
FURUKAWA ELECTRIC CO LTD12 citations73
US11936156B2Mar 19, 2024
Optical power transmission apparatus
FURUKAWA ELECTRIC CO LTD0 citations62
US7881359B2Feb 1, 2011
Surface-emission semiconductor laser device
FURUKAWA ELECTRIC CO LTD2 citations62
US7525726B2Apr 28, 2009
Photonic crystal semiconductor device and production method thereof
FURUKAWA ELECTRIC CO LTD5 citations62
US7215693B2May 8, 2007
Surface emitting semiconductor laser device
FURUKAWA ELECTRIC CO LTD2 citations62
US7085301B2Aug 1, 2006
Photonic crystal single transverse mode defect structure for vertical cavity surface emitting laser
FURUKAWA ELECTRIC CO LTD6 citations62
US6737290B2May 18, 2004
Surface-emitting semiconductor laser device and method for fabricating the same, and surface-emitting semiconductor laser array employing the laser device
FURUKAWA ELECTRIC CO LTD4 citations62
US6636543B2Oct 21, 2003
Semiconductor device and surface emitting semiconductor laser device
FURUKAWA ELECTRIC CO LTD2 citations62
US6115116ASep 5, 2000
Waveguide-type variable-sensitivity semiconductor photodetector
FURUKAWA ELECTRIC CO LTD3 citations62
US6829274B2Dec 7, 2004
Surface emitting semiconductor laser device
FURUKAWA ELECTRIC CO LTD3 citations60
US9054486B2Jun 9, 2015
Optical amplifier device
FURUKAWA ELECTRIC CO LTD1 citations52
US9912122B2Mar 6, 2018
Semiconductor optical device
FURUKAWA ELECTRIC CO LTD0 citations51
US9711945B2Jul 18, 2017
Method of designing semiconductor laser device, method of designing raman amplifier, methods of manufacturing semiconductor laser device, semiconductor laser device, raman amplifier, and optical communication system
FURUKAWA ELECTRIC CO LTD0 citations41
US7885312B2Feb 8, 2011
Surface emitting semiconductor laser element
FURUKAWA ELECTRIC CO LTD0 citations40