Inventor
DAS MRINAL K
US22 patents
⚠️ This page may combine multiple inventors who share the name “DAS MRINAL K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CREE INC
15 patentsUS7528040B2May 5, 2009
Methods of fabricating silicon carbide devices having smooth channels
CREE INC51 citations96
US9640617B2May 2, 2017
High performance power module
CREE INC24 citations93
US9373617B2Jun 21, 2016
High current, low switching loss SiC power module
CREE INC17 citations92
US7414268B2Aug 19, 2008
High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities
CREE INC12 citations84
US7391057B2Jun 24, 2008
High voltage silicon carbide devices having bi-directional blocking capabilities
CREE INC9 citations84
US9998109B1Jun 12, 2018
Power module with improved reliability
CREE INC7 citations82
US7727904B2Jun 1, 2010
Methods of forming SiC MOSFETs with high inversion layer mobility
CREE INC10 citations80
US11171229B2Nov 9, 2021
Low switching loss high performance power module
CREE INC0 citations62
US10707858B2Jul 7, 2020
Power module with improved reliability
CREE INC1 citations60
US7572741B2Aug 11, 2009
Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
CREE INC2 citations59
US7615801B2Nov 10, 2009
High voltage silicon carbide devices having bi-directional blocking capabilities
CREE INC1 citations52
US10680518B2Jun 9, 2020
High speed, efficient SiC power module
CREE INC0 citations51
US10141302B2Nov 27, 2018
High current, low switching loss SiC power module
CREE INC0 citations51
US9142663B2Sep 22, 2015
Silicon carbide devices having smooth channels
CREE INC0 citations51
US7811943B2Oct 12, 2010
Process for producing silicon carbide crystals having increased minority carrier lifetimes
CREE INC0 citations51
DAS MRINAL K
4 patentsUS8859366B2Oct 14, 2014
Methods of fabricating silicon carbide devices having smooth channels
DAS MRINAL K1 citations60
US8188483B2May 29, 2012
Silicon carbide devices having smooth channels
DAS MRINAL K1 citations60
US8536066B2Sep 17, 2013
Methods of forming SiC MOSFETs with high inversion layer mobility
DAS MRINAL K1 citations47
US8119539B2Feb 21, 2012
Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
DAS MRINAL K0 citations47