Inventor
HULL BRETT
US18 patents
⚠️ This page may combine multiple inventors who share the name “HULL BRETT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CREE INC
12 patentsUS9887287B1Feb 6, 2018
Power semiconductor devices having gate trenches with implanted sidewalls and related methods
CREE INC86 citations95
US9530844B2Dec 27, 2016
Transistor structures having reduced electrical field at the gate oxide and methods for making same
CREE INC7 citations83
US7727904B2Jun 1, 2010
Methods of forming SiC MOSFETs with high inversion layer mobility
CREE INC10 citations80
US10861931B2Dec 8, 2020
Power semiconductor devices having gate trenches and buried edge terminations and related methods
CREE INC3 citations70
US11184001B2Nov 23, 2021
Power switching devices with high dV/dt capability and methods of making such devices
CREE INC0 citations62
US10886396B2Jan 5, 2021
Transistor structures having a deep recessed P+ junction and methods for making same
CREE INC0 citations62
US10847647B2Nov 24, 2020
Power semiconductor devices having top-side metallization structures that include buried grain stop layers
CREE INC1 citations58
US10840367B2Nov 17, 2020
Transistor structures having reduced electrical field at the gate oxide and methods for making same
CREE INC0 citations51
US10601413B2Mar 24, 2020
Power switching devices with DV/DT capability and methods of making such devices
CREE INC0 citations51
US10115815B2Oct 30, 2018
Transistor structures having a deep recessed P+ junction and methods for making same
CREE INC1 citations51
US10068834B2Sep 4, 2018
Floating bond pad for power semiconductor devices
CREE INC0 citations49
US10510905B2Dec 17, 2019
Power Schottky diodes having closely-spaced deep blocking junctions in a heavily-doped drift region
CREE INC0 citations39
WOLFSPEED INC
4 patentsUS12159909B2Dec 3, 2024
Power semiconductor device with reduced strain
WOLFSPEED INC0 citations61
US11869948B2Jan 9, 2024
Power semiconductor device with reduced strain
WOLFSPEED INC0 citations61
US11837629B2Dec 5, 2023
Power semiconductor devices having gate trenches and buried edge terminations and related methods
WOLFSPEED INC0 citations60
US11222955B2Jan 11, 2022
Semiconductor power devices having gate dielectric layers with improved breakdown characteristics and methods of forming such devices
WOLFSPEED INC0 citations57