Inventor

BAE JUN-SOO

KR35 patents

⚠️ This page may combine multiple inventors who share the name “BAE JUN-SOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BAE JUN-SOO

SAMSUNG ELECTRONICS CO LTD

Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier

Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier

Multi-layer phase-changeable memory devices

Nonvolatile memory device, storage system having the same, and method of driving the nonvolatile memory device

Phase change memory devices including memory cells having different phase change materials and related methods and systems

Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory

Methods of fabricating multi-layer phase-changeable memory devices

Magnetic tunnel junction and memory device including the same

Resistance variable memory device and programming method thereof

Phase change memory device and method of fabricating the same

Method of writing to MRAM devices

Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the same

Resistance variable memory device and operating method thereof

Methods of forming magnetic memory devices including oxidizing and etching magnetic layers

Phase-changeable memory devices including an adiabatic layer

Multi-layer phase-changeable memory devices

Magnetic random access memory device and method of forming the same

Magnetic random access memory devices and methods of manufacturing the same

Magnetic memory device

Phase change memory device and method of forming the same

Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof

Magnetic random access memory device and method of forming the same

Magnetic memory device and method of fabricating the same

Phase changeable structure and method of forming the same

Method of forming a phase changeable structure

BAE JUN-SOO

Phase change memory devices and systems, and related programming methods

Multi-level phase change memory device, program method thereof, and method and system including the same

Method fabricating semiconductor device using multiple polishing processes

CHO WOO-YEONG

Method of driving multi-level variable resistive memory device and multi-level variable resistive memory device

Variable resistance memory device and system thereof

HWANG KYU-MAN

Phase change memory devices and methods of manufacturing the same

Magnetic random access memory devices and methods of manufacturing the same

CHOI BYUNG-GIL

Variable resistance memory device and system thereof

HA YONG-HO

Methods of forming phase-changeable memory devices including an adiabatic layer

KANG MYUNG-JIN

Non-volatile memory device including phase-change material