Inventor
TAKANASHI KEIICHI
JP32 patents
⚠️ This page may combine multiple inventors who share the name “TAKANASHI KEIICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SUMCO CORP
14 patentsUS9816199B2Nov 14, 2017
Method of manufacturing single crystal
SUMCO CORP2 citations72
US9567692B2Feb 14, 2017
Silicon single crystal manufacturing apparatus and silicon single crystal manufacturing method
SUMCO CORP2 citations72
US9289876B2Mar 22, 2016
Method and apparatus for polishing work
SUMCO CORP3 citations71
US10261125B2Apr 16, 2019
Semiconductor wafer evaluation standard setting method, semiconductor wafer evaluation method, semiconductor wafer manufacturing process evaluation method, and semiconductor wafer manufacturing method
SUMCO CORP3 citations68
US10472733B2Nov 12, 2019
Silicon single crystal manufacturing method
SUMCO CORP1 citations62
US10903099B2Jan 26, 2021
Semiconductor wafer placement position determination method and semiconductor epitaxial wafer production method
SUMCO CORP1 citations61
US12435443B2Oct 7, 2025
Method and apparatus for manufacturing defect-free monocrystalline silicon crystal
SUMCO CORP0 citations57
US11618971B2Apr 4, 2023
Method and apparatus for manufacturing defect-free monocrystalline silicon crystal
SUMCO CORP1 citations57
US11703452B2Jul 18, 2023
Method and apparatus for measuring transmittance of quartz crucible
SUMCO CORP0 citations51
US9708731B2Jul 18, 2017
Method of producing silicon single crystal
SUMCO CORP0 citations51
US12546029B2Feb 10, 2026
System and method for producing single crystal
SUMCO CORP0 citations50
US11361462B2Jun 14, 2022
Method of evaluating inner circumference of quartz crucible and quartz crucible inner circumference evaluation apparatus
SUMCO CORP0 citations49
US11826870B2Nov 28, 2023
Apparatus and method for double-side polishing work
SUMCO CORP0 citations47
US11717931B2Aug 8, 2023
Apparatus and method for double-side polishing work
SUMCO CORP0 citations47
TAKANASHI KEIICHI
5 patentsUS8871023B2Oct 28, 2014
Silicon single crystal pull-up apparatus and method of manufacturing silicon single crystal
TAKANASHI KEIICHI7 citations82
US9284660B2Mar 15, 2016
Apparatus of producing silicon single crystal and method of producing silicon single crystal
TAKANASHI KEIICHI2 citations61
US8414701B2Apr 9, 2013
Method for manufacturing silicon single crystal in which a crystallization temperature gradient is controlled
TAKANASHI KEIICHI2 citations61
US8187378B2May 29, 2012
Silicon single crystal pulling method
TAKANASHI KEIICHI5 citations61
US8801853B2Aug 12, 2014
Mechanism for controlling melt level in single crystal pulling apparatus, method for controlling melt level in single crystal pulling apparatus, mechanism for adjusting melt level in single crystal pulling apparatus and method for adjusting melt level while pulling single crystal
TAKANASHI KEIICHI1 citations51
ORSCHEL BENNO
5 patentsUS8496765B2Jul 30, 2013
Method for correcting speed deviations between actual and nominal pull speed during crystal growth
ORSCHEL BENNO2 citations60
US8673075B2Mar 18, 2014
Procedure for in-situ determination of thermal gradients at the crystal growth front
ORSCHEL BENNO0 citations47
US8641822B2Feb 4, 2014
Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process
ORSCHEL BENNO0 citations47
US8221545B2Jul 17, 2012
Procedure for in-situ determination of thermal gradients at the crystal growth front
ORSCHEL BENNO0 citations47
US8545623B2Oct 1, 2013
Method and apparatus for controlling the growth process of a monocrystalline silicon ingot
ORSCHEL BENNO0 citations39
SUMITOMO METAL IND
3 patentsUS6187090B1Feb 13, 2001
Methods and a device for measuring melt surface temperature within apparatus for pulling a single crystal
SUMITOMO METAL IND15 citations82
US6111262AAug 29, 2000
Method for measuring a diameter of a crystal
SUMITOMO METAL IND8 citations73
US6411391B1Jun 25, 2002
Crystal section shape measuring method
SUMITOMO METAL IND2 citations61