Inventor
TONG JINHONG
US40 patents
⚠️ This page may combine multiple inventors who share the name “TONG JINHONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTERMOLECULAR INC
22 patentsUS8821985B2Sep 2, 2014
Method and apparatus for high-K gate performance improvement and combinatorial processing
INTERMOLECULAR INC342 citations98
US7972897B2Jul 5, 2011
Methods for forming resistive switching memory elements
INTERMOLECULAR INC75 citations98
US7629198B2Dec 8, 2009
Methods for forming nonvolatile memory elements with resistive-switching metal oxides
INTERMOLECULAR INC118 citations98
US7704789B2Apr 27, 2010
Methods for forming resistive switching memory elements
INTERMOLECULAR INC29 citations93
US7678607B2Mar 16, 2010
Methods for forming resistive switching memory elements
INTERMOLECULAR INC40 citations93
US8658511B1Feb 25, 2014
Etching resistive switching and electrode layers
INTERMOLECULAR INC26 citations90
US7879710B2Feb 1, 2011
Substrate processing including a masking layer
INTERMOLECULAR INC6 citations74
US9245848B2Jan 26, 2016
Methods for coating a substrate with an amphiphilic compound
INTERMOLECULAR INC3 citations71
US8575021B2Nov 5, 2013
Substrate processing including a masking layer
INTERMOLECULAR INC4 citations63
US8344375B2Jan 1, 2013
Nonvolatile memory elements with metal deficient resistive switching metal oxides
INTERMOLECULAR INC4 citations63
US8822265B2Sep 2, 2014
Method for reducing forming voltage in resistive random access memory
INTERMOLECULAR INC2 citations62
US8871860B2Oct 28, 2014
Methods for coating a substrate with an amphiphilic compound
INTERMOLECULAR INC1 citations61
US9330928B2May 3, 2016
Methods for selective etching of a multi-layer substrate
INTERMOLECULAR INC2 citations60
US9761800B2Sep 12, 2017
Method for reducing forming voltage in resistive random access memory
INTERMOLECULAR INC1 citations52
US9276203B2Mar 1, 2016
Resistive switching layers including Hf-Al-O
INTERMOLECULAR INC1 citations52
US9178145B2Nov 3, 2015
Methods for forming resistive switching memory elements
INTERMOLECULAR INC0 citations52
US9178031B2Nov 3, 2015
Methods of atomic-layer deposition of hafnium oxide/erbium oxide bi-layer as advanced gate dielectrics
INTERMOLECULAR INC0 citations52
US8889479B2Nov 18, 2014
Nonvolatile memory elements with metal-deficient resistive-switching metal oxides
INTERMOLECULAR INC0 citations52
US7884036B1Feb 8, 2011
Methods for treating substrates in preparation for subsequent processes
INTERMOLECULAR INC0 citations52
US9543516B2Jan 10, 2017
Method for forming a doped metal oxide for use in resistive switching memory elements
INTERMOLECULAR INC0 citations51
US9029233B1May 12, 2015
Resistive-switching memory elements having improved switching characteristics
INTERMOLECULAR INC0 citations51
US9023137B2May 5, 2015
Electroless deposition of platinum on copper
INTERMOLECULAR INC1 citations51
TONG JINHONG
7 patentsUS8613863B2Dec 24, 2013
Methods for selective etching of a multi-layer substrate
TONG JINHONG14 citations79
US8802492B2Aug 12, 2014
Method for forming resistive switching memory elements
TONG JINHONG3 citations60
US8846543B2Sep 30, 2014
Methods of atomic layer deposition of hafnium oxide / erbium oxide bi-layer as advanced gate dielectrics
TONG JINHONG0 citations51
US8735305B2May 27, 2014
Methods of forming fluorinated hafnium oxide gate dielectrics by atomic layer deposition
TONG JINHONG1 citations51
US8716125B2May 6, 2014
Methods of in-situ vapor phase deposition of self-assembled monolayers as copper adhesion promoters and diffusion barriers
TONG JINHONG0 citations51
US8551560B2Oct 8, 2013
Methods for improving selectivity of electroless deposition processes
TONG JINHONG1 citations51
US8741698B2Jun 3, 2014
Atomic layer deposition of zirconium oxide for forming resistive-switching materials
TONG JINHONG1 citations50
KONG BOB
4 patentsUS8859427B2Oct 14, 2014
Formation of a zinc passivation layer on titanium or titanium alloys used in semiconductor processing
KONG BOB4 citations72
US8728879B2May 20, 2014
Formation of a zinc passivation layer on titanium or titanium alloys used in semiconductor processing
KONG BOB2 citations61
US8545998B2Oct 1, 2013
Electroless deposition of platinum on copper
KONG BOB4 citations61
US8143164B2Mar 27, 2012
Formation of a zinc passivation layer on titanium or titanium alloys used in semiconductor processing
KONG BOB2 citations61