Inventor
LIN HENG-KUANG
TW16 patents
⚠️ This page may combine multiple inventors who share the name “LIN HENG-KUANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NUVOTON TECHNOLOGY CORP
8 patentsUS10062766B1Aug 28, 2018
Hetero-junction schottky diode device
NUVOTON TECHNOLOGY CORP4 citations67
US10411098B2Sep 10, 2019
Semiconductor device and manufacturing method thereof
NUVOTON TECHNOLOGY CORP1 citations62
US10217855B2Feb 26, 2019
Semiconductor substrate and semiconductor device
NUVOTON TECHNOLOGY CORP0 citations51
US10431454B2Oct 1, 2019
Semiconductor substrate and manufacturing method thereof
NUVOTON TECHNOLOGY CORP0 citations46
US10276454B2Apr 30, 2019
Semiconductor substrate having amorphous and single crystalline III-V compound semiconductor layers
NUVOTON TECHNOLOGY CORP0 citations46
US10847643B2Nov 24, 2020
Enhancement mode HEMT device and method of forming the same
NUVOTON TECHNOLOGY CORP0 citations45
US10446472B2Oct 15, 2019
Nitride semiconductor device
NUVOTON TECHNOLOGY CORP0 citations45
US10367088B2Jul 30, 2019
Nitride semiconductor device
NUVOTON TECHNOLOGY CORP0 citations35
EPISTAR CORP
6 patentsUS9331154B2May 3, 2016
High electron mobility transistor
EPISTAR CORP3 citations68
US9356128B2May 31, 2016
Semiconductor power device
EPISTAR CORP3 citations65
US9647102B2May 9, 2017
Field effect transistor
EPISTAR CORP0 citations48
US9299824B2Mar 29, 2016
Field effect transistor
EPISTAR CORP0 citations48
US9627523B2Apr 18, 2017
High electron mobility transistor
EPISTAR CORP0 citations44
US9711683B2Jul 18, 2017
Semiconductor device and the method of manufacturing the same
EPISTAR CORP0 citations39