Inventor
GOTO HIROKAZU
JP44 patents
⚠️ This page may combine multiple inventors who share the name “GOTO HIROKAZU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANKEN ELECTRIC CO LTD
20 patentsUS6989665B2Jan 24, 2006
Electric current detector with hall effect sensor
SANKEN ELECTRIC CO LTD72 citations98
US6841989B2Jan 11, 2005
Hall-effect current detector
SANKEN ELECTRIC CO LTD84 citations98
US6727683B2Apr 27, 2004
Hall-effect current detector
SANKEN ELECTRIC CO LTD74 citations98
US6759841B2Jul 6, 2004
Hall-effect current detector
SANKEN ELECTRIC CO LTD83 citations97
US6545457B2Apr 8, 2003
Current detector utilizing hall effect
SANKEN ELECTRIC CO LTD98 citations95
US7982242B2Jul 19, 2011
Warp-free semiconductor wafer, and devices using the same
SANKEN ELECTRIC CO LTD37 citations92
US6921955B2Jul 26, 2005
Noise-proof semiconductor device having a Hall effect element
SANKEN ELECTRIC CO LTD49 citations92
US6781358B2Aug 24, 2004
Hall-effect current detector
SANKEN ELECTRIC CO LTD36 citations92
US9673052B2Jun 6, 2017
Silicon-based substrate having first and second portions
SANKEN ELECTRIC CO LTD5 citations83
US5112774AMay 12, 1992
Method of fabricating a high-voltage semiconductor device having a rectifying barrier
SANKEN ELECTRIC CO LTD15 citations74
US5081510AJan 14, 1992
High-voltage semiconductor device having a rectifying barrier, and method of fabrication
SANKEN ELECTRIC CO LTD14 citations74
US5006483AApr 9, 1991
Fabrication of P-N junction semiconductor device
SANKEN ELECTRIC CO LTD6 citations74
US4980749ADec 25, 1990
P-N junction semiconductor device and method of fabrication
SANKEN ELECTRIC CO LTD6 citations74
US10553674B2Feb 4, 2020
Substrate for semiconductor device, semiconductor device, and method for manufacturing semiconductor device
SANKEN ELECTRIC CO LTD3 citations72
US9876101B2Jan 23, 2018
Semiconductor substrate and semiconductor device
SANKEN ELECTRIC CO LTD2 citations72
US9520286B2Dec 13, 2016
Semiconductor substrate, semiconductor device and method of manufacturing the semiconductor device
SANKEN ELECTRIC CO LTD2 citations62
US10068985B2Sep 4, 2018
Method for manufacturing semiconductor substrate, method for manufacturing semiconductor device, semiconductor substrate, and semiconductor device
SANKEN ELECTRIC CO LTD1 citations51
US9966259B2May 8, 2018
Silicon-based substrate, semiconductor device, and method for manufacturing semiconductor device
SANKEN ELECTRIC CO LTD1 citations51
US9401420B2Jul 26, 2016
Semiconductor device
SANKEN ELECTRIC CO LTD0 citations41
US7067923B2Jun 27, 2006
Semiconductor device having hall-effect and manufacturing method thereof
SANKEN ELECTRIC CO LTD0 citations39
SONY CORP
5 patentsUS6209974B1Apr 3, 2001
Wire dress protector for a television cabinet stand
SONY CORP28 citations90
US6095623AAug 1, 2000
Three pillar construction stand
SONY CORP28 citations90
US6152549ANov 28, 2000
Frameless sliding door system for a television cabinet stand
SONY CORP16 citations82
US6814009B2Nov 9, 2004
Load bearing pillar
SONY CORP18 citations81
USD489547SMay 11, 2004
Appliance stand
SONY CORP2 citations60
CANON KK
4 patentsUS4649449AMar 10, 1987
Perpendicular magnetic head
CANON KK30 citations92
US4506220AMar 19, 1985
Temperature compensated magnetoresistive effect thin film magnetic sensor
CANON KK32 citations92
US4438470AMar 20, 1984
Magnetic head of magnetic reluctance effect type and a method for making the same
CANON KK20 citations81
US4443826AApr 17, 1984
Magneto-resistive effect type magnetic head
CANON KK13 citations73
SHINETSU HANDOTAI KK
4 patentsUS10115589B2Oct 30, 2018
Epitaxial substrate for electronic devices, electronic device, method for producing the epitaxial substrate for electronic devices, and method for producing the electronic device
SHINETSU HANDOTAI KK4 citations72
US10319587B2Jun 11, 2019
Method of manufacturing epitaxial wafer and silicon-based substrate for epitaxial growth
SHINETSU HANDOTAI KK0 citations50
US9938638B2Apr 10, 2018
Method for producing semiconductor epitaxial wafer and semiconductor epitaxial wafer
SHINETSU HANDOTAI KK0 citations50
US9281187B2Mar 8, 2016
Method for manufacturing nitride semiconductor device
SHINETSU HANDOTAI KK0 citations41