Inventor
TSUCHIYA KEITARO
JP15 patents
⚠️ This page may combine multiple inventors who share the name “TSUCHIYA KEITARO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANKEN ELECTRIC CO LTD
10 patentsUS9673052B2Jun 6, 2017
Silicon-based substrate having first and second portions
SANKEN ELECTRIC CO LTD5 citations83
US10833184B2Nov 10, 2020
Semiconductor device substrate, semiconductor device, and method for manufacturing semiconductor device substrate
SANKEN ELECTRIC CO LTD3 citations72
US10586701B2Mar 10, 2020
Semiconductor base having a composition graded buffer layer stack
SANKEN ELECTRIC CO LTD5 citations72
US10553674B2Feb 4, 2020
Substrate for semiconductor device, semiconductor device, and method for manufacturing semiconductor device
SANKEN ELECTRIC CO LTD3 citations72
US10529842B2Jan 7, 2020
Semiconductor base substance having a boron containing buffer layer, semiconductor device including the same, and methods for manufacturing the semiconductor base substance and the semiconductor device
SANKEN ELECTRIC CO LTD3 citations72
US9876101B2Jan 23, 2018
Semiconductor substrate and semiconductor device
SANKEN ELECTRIC CO LTD2 citations72
US9520286B2Dec 13, 2016
Semiconductor substrate, semiconductor device and method of manufacturing the semiconductor device
SANKEN ELECTRIC CO LTD2 citations62
US10068985B2Sep 4, 2018
Method for manufacturing semiconductor substrate, method for manufacturing semiconductor device, semiconductor substrate, and semiconductor device
SANKEN ELECTRIC CO LTD1 citations51
US9966259B2May 8, 2018
Silicon-based substrate, semiconductor device, and method for manufacturing semiconductor device
SANKEN ELECTRIC CO LTD1 citations51
US9401420B2Jul 26, 2016
Semiconductor device
SANKEN ELECTRIC CO LTD0 citations41
SHINETSU HANDOTAI KK
4 patentsUS10115589B2Oct 30, 2018
Epitaxial substrate for electronic devices, electronic device, method for producing the epitaxial substrate for electronic devices, and method for producing the electronic device
SHINETSU HANDOTAI KK4 citations72
US10319587B2Jun 11, 2019
Method of manufacturing epitaxial wafer and silicon-based substrate for epitaxial growth
SHINETSU HANDOTAI KK0 citations50
US9938638B2Apr 10, 2018
Method for producing semiconductor epitaxial wafer and semiconductor epitaxial wafer
SHINETSU HANDOTAI KK0 citations50
US9281187B2Mar 8, 2016
Method for manufacturing nitride semiconductor device
SHINETSU HANDOTAI KK0 citations41