Inventor

VELLIANITIS GEORGIOS

BE125 patents

⚠️ This page may combine multiple inventors who share the name “VELLIANITIS GEORGIOS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

VELLIANITIS GEORGIOS

TAIWAN SEMICONDUCTOR MFG CO LTD

Barrier layer for FinFET channels

Semiconductor device and manufacturing method thereof

Localized heating in laser annealing process

Method for manufacturing horizontal-gate-all-around devices with different number of nanowires

FinFET with channel backside passivation layer device and method

Semiconductor device

Semiconductor device and method for manufacturing the same

Ferroelectric channel field effect transistor

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

Multigate device having reduced contact resistivity

Crystalline semiconductor layer formed in BEOL processes

Protrusion field-effect transistor and methods of making the same

Ferroelectric memory device and method of forming the same

Ferroelectric channel field effect transistor

Semiconductor device and manufacturing method thereof

Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the same

Complementary metal-oxide-semiconductor device and method of manufacturing the same

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

Crystalline semiconductor layer formed in BEOL processes

Germanium nitride layers on semiconductor structures, and methods for forming the same

FinFET with two fins on STI

Semiconductor device and method of fabricating the same

Apparatus and method for multiple gate transistors

Semiconductor device and manufacturing method thereof

Transistors including crystalline raised active regions and methods for forming the same

Access transistor including a metal oxide barrier layer and methods for forming the same

Vertically stacked FeFETs with common channel

Multigate device having reduced contact resistivity

Semiconductor structure and manufacturing method thereof

Ferroelectric device and wave computing device

Access transistor including a metal oxide barrier layer and methods for forming the same

Semiconductor device and method of fabricating the same

Ferroelectric memory device and method of forming the same

Semiconductor structure and method of forming the same

Semiconductor structure with thin film transistor

Ferroelectric channel field effect transistor

Ferroelectric memory device and method of forming the same

Semiconductor device and manufacturing method thereof

Complementary metal-oxide-semiconductor device and method of manufacturing the same

Semiconductor device and method for manufacturing the same

Semiconductor device and manufacturing method thereof

Multigate device having reduced contact resistivity

Formation of semiconductor arrangement comprising semiconductor column

Ferroelectric field effect transistor

VELLIANITIS GEORGIOS

MOSFETs with channels on nothing and methods for forming the same

Defect-free hetero-epitaxy of lattice mismatched semiconductors

FinFET with a buried semiconductor material between two fins

TAIWAN SEMICONDUCTOR MFG

Methods for forming semiconductor materials in STI trenches

Method of removing threading dislocation defect from a fin feature of III-V group semiconductor material

VAN DAL MARK

Strained channel field effect transistor