Inventor

CHANDRASEKHARAN RAMESH

US57 patents

⚠️ This page may combine multiple inventors who share the name “CHANDRASEKHARAN RAMESH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHANDRASEKHARAN RAMESH

LAM RES CORP

Suppressing interfacial reactions by varying the wafer temperature throughout deposition

Method for depositing metals free ald silicon nitride films using halide-based precursors

Sequential precursor dosing in an ALD multi-station/batch reactor

Plasma suppression behind a showerhead through the use of increased pressure

Wafer centering in pocket to improve azimuthal thickness uniformity at wafer edge

Progressive heating of components of substrate processing systems using TCR element-based heaters

Low volume showerhead with porous baffle

Systems and methods for detection of plasma instability by electrical measurement

Variable temperature hardware and methods for reduction of wafer backside deposition

Systems and methods for detection of plasma instability by electrical measurement

Low volume showerhead with faceplate holes for improved flow uniformity

Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region

Chemical deposition apparatus having conductance control

Fill on demand ampoule refill

Use of voltage and current measurements to control dual zone ceramic pedestals

Purge and pumping structures arranged beneath substrate plane to reduce defects

Integrated direct dielectric and metal deposition

Systems and methods for frequency modulation of radiofrequency power supply for controlling plasma instability

Sequential precursor dosing in an ALD multi-station/batch reactor

Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region

Planar substrate edge contact with open volume equalization pathways and side containment

Systems and methods enabling low defect processing via controlled separation and delivery of chemicals during atomic layer deposition

Chemical deposition chamber having gas seal

Multi zone substrate support for ALD film property correction and tunability

Use of voltage and current measurements to control dual zone ceramic pedestals

Multi-tray ballast vapor draw systems

Substrate processing systems including gas delivery system with reduced dead legs

Systems and methods for reducing effluent build-up in a pumping exhaust system

Automated feedforward and feedback sequence for patterning CD control

Dual zone heaters for metallic pedestals

Progressive heating of components of substrate processing systems using TCR element-based heaters

Dynamic temperature control of substrate support in substrate processing system

Planar substrate edge contact with open volume equalization pathways and side containment

Suppressing interfacial reactions by varying the wafer temperature throughout deposition

Temperature control of a multi-zone pedestal

Fill on demand ampoule refill

Electrostatic chucking pedestal with substrate backside purging and thermal sinking

Multilayer coatings of component parts for a work piece processing chamber

Systems and methods for reducing effluent build-up in a pumping exhaust system

Substrate processing systems including gas delivery system with reduced dead legs

Rapid tuning of critical dimension non-uniformity by modulating temperature transients of multi-zone substrate supports

Use of vacuum during transfer of substrates

Pedestals for modulating film properties in atomic layer deposition (ALD) substrate processing chambers

Systems and methods enabling low defect processing via controlled separation and delivery of chemicals during atomic layer deposition

NOVELLUS SYSTEMS INC

Plasma activated conformal film deposition

Multi-plenum, dual-temperature showerhead

Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region

Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region

LAVOIE ADRIEN

Plasma activated conformal film deposition

CHANDRASEKHARAN RAMESH

Point of use valve manifold for semiconductor fabrication equipment