Inventor
OSTERMAIER CLEMENS
AT32 patents
⚠️ This page may combine multiple inventors who share the name “OSTERMAIER CLEMENS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AUSTRIA AG
23 patentsUS9837520B2Dec 5, 2017
Group III-nitride-based enhancement mode transistor having a multi-heterojunction fin structure
INFINEON TECHNOLOGIES AUSTRIA AG6 citations84
US9728630B2Aug 8, 2017
High-electron-mobility transistor having a buried field plate
INFINEON TECHNOLOGIES AUSTRIA AG7 citations84
US9728470B1Aug 8, 2017
Semiconductor structure and methods
INFINEON TECHNOLOGIES AUSTRIA AG12 citations80
US10600710B2Mar 24, 2020
Semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG3 citations73
US10199216B2Feb 5, 2019
Semiconductor wafer and method
INFINEON TECHNOLOGIES AUSTRIA AG5 citations73
US10177061B2Jan 8, 2019
Semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG3 citations73
US10090406B2Oct 2, 2018
Non-planar normally off compound semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG4 citations73
US9847394B2Dec 19, 2017
Semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG5 citations73
US9837522B2Dec 5, 2017
III-nitride bidirectional device
INFINEON TECHNOLOGIES AUSTRIA AG6 citations73
US9647104B2May 9, 2017
Group III-nitride-based enhancement mode transistor having a heterojunction fin structure
INFINEON TECHNOLOGIES AUSTRIA AG5 citations73
US11349012B2May 31, 2022
Group III nitride-based transistor device and method of fabricating a gate structure for a group III nitride-based transistor device
INFINEON TECHNOLOGIES AUSTRIA AG2 citations70
US10126355B1Nov 13, 2018
Semiconductor probe test card with integrated hall measurement features
INFINEON TECHNOLOGIES AUSTRIA AG2 citations65
US11114554B2Sep 7, 2021
High-electron-mobility transistor having a buried field plate
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US12159918B2Dec 3, 2024
Group III nitride-based transistor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations59
US9515162B2Dec 6, 2016
Surface treatment of semiconductor substrate using free radical state fluorine particles
INFINEON TECHNOLOGIES AUSTRIA AG2 citations55
US10304923B2May 28, 2019
Method of forming a vertical potential short in a periphery region of a III-nitride stack for preventing lateral leakage
INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US10038051B2Jul 31, 2018
Vertical potential short in the periphery region of a III-nitride stack for preventing lateral leakage
INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US10038085B2Jul 31, 2018
High electron mobility transistor with carrier injection mitigation gate structure
INFINEON TECHNOLOGIES AUSTRIA AG1 citations52
US9412834B2Aug 9, 2016
Method of manufacturing HEMTs with an integrated Schottky diode
INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US10128133B1Nov 13, 2018
Method of conditioning an etch chamber for contaminant free etching of a semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG1 citations49
US9947600B2Apr 17, 2018
Semiconductor structure having a test structure formed in a group III nitride layer
INFINEON TECHNOLOGIES AUSTRIA AG0 citations48
US11557670B2Jan 17, 2023
Type III-V semiconductor device with improved leakage
INFINEON TECHNOLOGIES AUSTRIA AG0 citations47
US9590048B2Mar 7, 2017
Electronic device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations42
INFINEON TECHNOLOGIES AUSTRIA
5 patentsUS9048303B1Jun 2, 2015
Group III-nitride-based enhancement mode transistor
INFINEON TECHNOLOGIES AUSTRIA32 citations94
US9337279B2May 10, 2016
Group III-nitride-based enhancement mode transistor
INFINEON TECHNOLOGIES AUSTRIA6 citations84
US9142550B2Sep 22, 2015
High-voltage cascaded diode with HEMT and monolithically integrated semiconductor diode
INFINEON TECHNOLOGIES AUSTRIA9 citations84
US9263545B2Feb 16, 2016
Method of manufacturing a high breakdown voltage III-nitride device
INFINEON TECHNOLOGIES AUSTRIA3 citations73
US9349829B2May 24, 2016
Method of manufacturing a multi-channel HEMT
INFINEON TECHNOLOGIES AUSTRIA1 citations52