Inventor

HAEBERLEN OLIVER

AT82 patents

⚠️ This page may combine multiple inventors who share the name “HAEBERLEN OLIVER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HAEBERLEN OLIVER

INFINEON TECHNOLOGIES AUSTRIA AG

Power MOSFET semiconductor

High-electron-mobility transistor having a buried field plate

Enhancement mode Group III nitride-based transistor device

High electron mobility transistor with doped semiconductor region in gate structure

High electron mobility transistor with dual thickness barrier layer

System and method for a GaN-based start-up circuit

High electron mobility transistor with deep charge carrier gas contact structure

Electronic component

Power MOSFET semiconductor

Semiconductor wafer and method

Semiconductor device

Semiconductor device

Non-planar normally off compound semiconductor device

Semiconductor device

III-nitride bidirectional device

Group III-nitride-based enhancement mode transistor having a heterojunction fin structure

Electronic circuit and method for operating a transistor arrangement

Semiconductor component with transistor

Group III nitride-based transistor device and method of fabricating a gate structure for a group III nitride-based transistor device

Nitride semiconductor device

Enhancement mode transistor device

Nitride semiconductor device

High electron mobility transistor with doped semiconductor region in gate structure

High electron mobility transistor with doped semiconductor region in gate structure

INFINEON TECHNOLOGIES AG

Method of fabricating a power electronic device

Power transistor arrangement and method for fabricating it

Power transistor arrangement and method for fabricating it

Method for manufacturing a semiconductor component

Power electronic device

Device including multiple semiconductor chips and multiple carriers

Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device

Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device

Semiconductor element with improved adhesion characteristics of the non-metallic surfaces

INFINEON TECHNOLOGIES AUSTRIA

Semiconductor device

High electron mobility transistor with RC network integrated into gate structure

Power MOSFET semiconductor

Method for producing a connection electrode for two semiconductor zones arranged one above another

Monolithic semiconductor switches and method for manufacturing

Method of manufacturing a high breakdown voltage III-nitride device

Semiconductor component structure with vertical dielectric layers

Method of manufacturing a semiconductor device having a buried field plate

HAEBERLEN OLIVER

Power MOSFET semiconductor device

Monolithic semiconductor switches and method for manufacturing

Lateral MOS power transistor having backside terminal electrode

CURATOLA GILBERTO

Normally-off compound semiconductor tunnel transistor

HEMT with integrated low forward bias diode

RIEGER WALTER

Monolithically integrated HEMT and current protection device

OSTERMAIER CLEMENS

Multi-channel HEMT

MAUDER ANTON

Semiconductor component with a front side and a back side metallization layer and manufacturing method thereof

HIRLER FRANZ

Semiconductor component with cell structure and method for producing the same