Inventor
JUNG HYUNGSUK
KR18 patents
⚠️ This page may combine multiple inventors who share the name “JUNG HYUNGSUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
17 patentsUS9190272B1Nov 17, 2015
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD22 citations88
US10461167B2Oct 29, 2019
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD18 citations84
US11121131B2Sep 14, 2021
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations72
US12581642B2Mar 17, 2026
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12507397B2Dec 23, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12057470B2Aug 6, 2024
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US12021080B2Jun 25, 2024
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11742351B2Aug 29, 2023
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11557656B2Jan 17, 2023
Semiconductor device having a capping pattern on a gate electrode
SAMSUNG ELECTRONICS CO LTD0 citations61
US12336202B2Jun 17, 2025
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations60
US12557308B2Feb 17, 2026
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations59
US12598760B2Apr 7, 2026
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12575119B2Mar 10, 2026
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12334308B2Jun 17, 2025
Batch-type apparatus for atomic layer etching (ALE), and ALE method and semiconductor device manufacturing method based on the same apparatus
SAMSUNG ELECTRONICS CO LTD0 citations51
US10811505B2Oct 20, 2020
Gate electrode having upper and lower capping patterns
SAMSUNG ELECTRONICS CO LTD0 citations51
US12527015B2Jan 13, 2026
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations49
US10079186B2Sep 18, 2018
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations34