Inventor
ZHANG HANSHEN
US13 patents
Patents
13 patentsUS9472412B2Oct 18, 2016
Procedure for etch rate consistency
APPLIED MATERIALS INC132 citations98
US9245762B2Jan 26, 2016
Procedure for etch rate consistency
APPLIED MATERIALS INC165 citations98
US9881805B2Jan 30, 2018
Silicon selective removal
APPLIED MATERIALS INC110 citations97
US9564338B1Feb 7, 2017
Silicon-selective removal
APPLIED MATERIALS INC124 citations97
US11637002B2Apr 25, 2023
Methods and systems to enhance process uniformity
APPLIED MATERIALS INC4 citations74
US10854426B2Dec 1, 2020
Metal recess for semiconductor structures
APPLIED MATERIALS INC2 citations70
US11121002B2Sep 14, 2021
Systems and methods for etching metals and metal derivatives
APPLIED MATERIALS INC3 citations69
US11328909B2May 10, 2022
Chamber conditioning and removal processes
APPLIED MATERIALS INC1 citations62
US11239061B2Feb 1, 2022
Methods and systems to enhance process uniformity
APPLIED MATERIALS INC0 citations62
US11682560B2Jun 20, 2023
Systems and methods for hafnium-containing film removal
APPLIED MATERIALS INC0 citations60
US10861676B2Dec 8, 2020
Metal recess for semiconductor structures
APPLIED MATERIALS INC1 citations59
US10692880B2Jun 23, 2020
3D NAND high aspect ratio structure etch
APPLIED MATERIALS INC0 citations42
US9960049B2May 1, 2018
Two-step fluorine radical etch of hafnium oxide
APPLIED MATERIALS INC0 citations41