P

Inventor

KANG SEOGOO

KR14 patents

Patents

14 patents
US11792994B2Oct 17, 2023

Three-dimensional memory device including a string selection line gate electrode having a silicide layer

SAMSUNG ELECTRONICS CO LTD4 citations73
US11444098B2Sep 13, 2022

Vertical non-volatile memory devices and methods of programming the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US11374017B2Jun 28, 2022

Three-dimensional memory device including a string selection line gate electrode having a silicide layer

SAMSUNG ELECTRONICS CO LTD2 citations72
US11594544B2Feb 28, 2023

Semiconductor devices with string select channel for improved upper connection

SAMSUNG ELECTRONICS CO LTD5 citations71
US11552098B2Jan 10, 2023

Semiconductor device including data storage pattern with improved retention characteristics

SAMSUNG ELECTRONICS CO LTD2 citations71
US11637117B2Apr 25, 2023

Semiconductor device having selection line stud connected to string selection line

SAMSUNG ELECTRONICS CO LTD2 citations69
US11729972B2Aug 15, 2023

3D memory devices

SAMSUNG ELECTRONICS CO LTD1 citations62
US11716851B2Aug 1, 2023

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US11114460B2Sep 7, 2021

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US12439602B2Oct 7, 2025

Semiconductor device including data storage pattern with improved retention characteristics

SAMSUNG ELECTRONICS CO LTD0 citations61
US12471285B2Nov 11, 2025

Semiconductor device having selection line stud connected to string selection line

SAMSUNG ELECTRONICS CO LTD0 citations59
US12268004B2Apr 1, 2025

Semiconductor devices with string select channel layer

SAMSUNG ELECTRONICS CO LTD0 citations59
US11411078B2Aug 9, 2022

Semiconductor devices including dummy patterns for discharging effects

SAMSUNG ELECTRONICS CO LTD1 citations59
US11515322B2Nov 29, 2022

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations50