Inventor
JANG DAEHYUN
KR23 patents
⚠️ This page may combine multiple inventors who share the name “JANG DAEHYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
19 patentsUS8383482B2Feb 26, 2013
Three-dimensional semiconductor memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD39 citations94
US8728893B2May 20, 2014
Method of fabricating a three-dimentional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD8 citations84
US10971516B2Apr 6, 2021
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations83
US10522350B2Dec 31, 2019
Method of fabricating three-dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD3 citations72
US10211053B2Feb 19, 2019
Methods of forming staircase-shaped connection structures of three-dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD2 citations72
US9941122B2Apr 10, 2018
Methods of forming staircase-shaped connection structures of three-dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD3 citations72
US8980731B2Mar 17, 2015
Methods of forming a semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations72
US11456316B2Sep 27, 2022
Semiconductor device having word line separation layer
SAMSUNG ELECTRONICS CO LTD4 citations70
US10672790B2Jun 2, 2020
Method of fabricating three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations70
US9466612B2Oct 11, 2016
Semiconductor memory devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US9257441B2Feb 9, 2016
Semiconductor memory devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US11864385B2Jan 2, 2024
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11469244B2Oct 11, 2022
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations61
US12010849B2Jun 11, 2024
Semiconductor device having word line separation layer
SAMSUNG ELECTRONICS CO LTD0 citations59
US11521983B2Dec 6, 2022
Method of fabricating three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations59
US10950419B2Mar 16, 2021
Shrouds and substrate treating systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10685837B2Jun 16, 2020
Methods of forming staircase-shaped connection structures of three-dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US9972638B2May 15, 2018
Methods of fabricating three-dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US11515322B2Nov 29, 2022
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations50
OH JUNG-IK
2 patentsUS9455268B2Sep 27, 2016
Staircase-shaped connection structures of three-dimensional semiconductor devices
OH JUNG-IK80 citations96
US9087790B2Jul 21, 2015
Method of fabricating three-dimensional semiconductor device and three-dimensional semiconductor device fabricated using the same
OH JUNG-IK18 citations83