Inventor
AHN JONGSEON
KR10 patents
Patents
10 patentsUS11792994B2Oct 17, 2023
Three-dimensional memory device including a string selection line gate electrode having a silicide layer
SAMSUNG ELECTRONICS CO LTD4 citations73
US11374017B2Jun 28, 2022
Three-dimensional memory device including a string selection line gate electrode having a silicide layer
SAMSUNG ELECTRONICS CO LTD2 citations72
US11404434B2Aug 2, 2022
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD5 citations71
US11114461B2Sep 7, 2021
Three-dimensional semiconductor memory devices having source structure overlaps buried insulating layer
SAMSUNG ELECTRONICS CO LTD2 citations71
US11563023B2Jan 24, 2023
Semiconductor device with reduced vertical height
SAMSUNG ELECTRONICS CO LTD2 citations70
US11616078B2Mar 28, 2023
Three-dimensional semiconductor memory devices having a source structure that overlaps a buried insulating layer
SAMSUNG ELECTRONICS CO LTD0 citations60
US11450610B2Sep 20, 2022
Vertical semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations55
US11515322B2Nov 29, 2022
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations50
US12588496B2Mar 24, 2026
Semiconductor device and data storage system including the same
SAMSUNG ELECTRONICS CO LTD0 citations47
US9799551B2Oct 24, 2017
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations39