Inventor
KIM SEULYE
KR24 patents
⚠️ This page may combine multiple inventors who share the name “KIM SEULYE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
21 patentsUS10263006B2Apr 16, 2019
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD5 citations72
US11430800B2Aug 30, 2022
Vertical semiconductor devices
SAMSUNG ELECTRONICS CO LTD2 citations71
US10930739B2Feb 23, 2021
Three-dimensional semiconductor memory devices and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US10903231B2Jan 26, 2021
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations70
US11910607B2Feb 20, 2024
Three-dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11737277B2Aug 22, 2023
Vertical memory device with a channel layer in a stacked dielectric layer
SAMSUNG ELECTRONICS CO LTD0 citations62
US11424264B2Aug 23, 2022
Three-dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11282856B2Mar 22, 2022
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11189636B2Nov 30, 2021
Vertical memory device with a channel layer in a stacked dielectric layer
SAMSUNG ELECTRONICS CO LTD0 citations62
US10892278B2Jan 12, 2021
Three-dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US10396094B2Aug 27, 2019
Three-dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations62
US10453745B2Oct 22, 2019
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US11792993B2Oct 17, 2023
Three-dimensional semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11626414B2Apr 11, 2023
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11387253B2Jul 12, 2022
Three-dimensional semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11600638B2Mar 7, 2023
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US10651194B2May 12, 2020
Semiconductor device including dielectric layer
SAMSUNG ELECTRONICS CO LTD0 citations52
US10651191B2May 12, 2020
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10090323B2Oct 2, 2018
Semiconductor device including dielectric layer
SAMSUNG ELECTRONICS CO LTD0 citations52
US11711920B2Jul 25, 2023
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US10950612B2Mar 16, 2021
Three dimensional semiconductor memory with residual memory layer
SAMSUNG ELECTRONICS CO LTD0 citations51