P

Inventor

NIKONOV DMITRI

US33 patents
⚠️ This page may combine multiple inventors who share the name “NIKONOV DMITRI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

32 patents
US6215577B1Apr 10, 2001

Method and apparatus for optically modulating an optical beam with a multi-pass wave-guided optical modulator

INTEL CORP36 citations92
US10333523B2Jun 25, 2019

Exclusive-OR logic device with spin orbit torque effect

INTEL CORP11 citations84
US9620188B2Apr 11, 2017

MTJ spin hall MRAM bit-cell and array

INTEL CORP15 citations84
US9209288B2Dec 8, 2015

Reduced scale resonant tunneling field effect transistor

INTEL CORP10 citations84
US6351326B1Feb 26, 2002

Method and apparatus for optically modulating light utilizing a resonant cavity structure

INTEL CORP8 citations74
US12009018B2Jun 11, 2024

Transition metal dichalcogenide based spin orbit torque memory device

INTEL CORP2 citations73
US11557717B2Jan 17, 2023

Transition metal dichalcogenide based spin orbit torque memory device with magnetic insulator

INTEL CORP2 citations73
US11417830B2Aug 16, 2022

Magnetically doped spin orbit torque electrode for perpendicular magnetic random access memory

INTEL CORP5 citations73
US11398562B2Jul 26, 2022

Magnetoelectric spin orbit logic transistor with a spin filter

INTEL CORP2 citations73
US11398596B2Jul 26, 2022

Magnetic tunnel junction (MTJ) integration on backside of silicon

INTEL CORP4 citations73
US11393515B2Jul 19, 2022

Transition metal dichalcogenide based spin orbit torque memory device

INTEL CORP2 citations73
US11374163B2Jun 28, 2022

Spin orbit memory with multiferroic material

INTEL CORP4 citations73
US11294985B2Apr 5, 2022

Efficient analog in-memory matrix multiplication processor

INTEL CORP2 citations73
US11245068B2Feb 8, 2022

Transition metal dichalcogenide based magnetoelectric memory device

INTEL CORP2 citations73
US11621391B2Apr 4, 2023

Antiferromagnet based spin orbit torque memory device

INTEL CORP0 citations63
US7059782B2Jun 13, 2006

Suppressing back reflection between optical interfaces

INTEL CORP2 citations63
US11696514B2Jul 4, 2023

Transition metal dichalcogenide based magnetoelectric memory device

INTEL CORP0 citations62
US11594624B2Feb 28, 2023

Transistor structures formed with 2DEG at complex oxide interfaces

INTEL CORP0 citations62
US11502188B2Nov 15, 2022

Apparatus and method for boosting signal in magnetoelectric spin orbit logic

INTEL CORP0 citations62
US11411046B2Aug 9, 2022

Semiconductor device heat extraction by spin thermoelectrics

INTEL CORP1 citations62
US11281961B2Mar 22, 2022

Radio frequency interconnections for oscillatory neural networks

INTEL CORP0 citations62
US7141843B2Nov 28, 2006

Integratable polarization rotator

INTEL CORP3 citations61
US12020144B2Jun 25, 2024

Oscillator based neural network apparatus

INTEL CORP0 citations52
US11594270B2Feb 28, 2023

Perpendicular spin injection via spatial modulation of spin orbit coupling

INTEL CORP0 citations52
US11575083B2Feb 7, 2023

Insertion layer between spin hall effect or spin orbit torque electrode and free magnet for improved magnetic memory

INTEL CORP0 citations52
US11410021B2Aug 9, 2022

Recurrent neuron implementation based on magneto-electric spin orbit logic

INTEL CORP0 citations52
US10553268B2Feb 4, 2020

Methods and apparatus to perform complex number generation and operation on a chip

INTEL CORP0 citations52
US8933522B2Jan 13, 2015

Repeated spin current interconnects

INTEL CORP1 citations52
US10885963B2Jan 5, 2021

Ferroelectric memory-based synapses

INTEL CORP0 citations51
US10600957B2Mar 24, 2020

Method for fabricating spin logic devices from in-situ deposited magnetic stacks

INTEL CORP0 citations50
US10861861B2Dec 8, 2020

Memory including a perovskite material

INTEL CORP0 citations42
US9741832B2Aug 22, 2017

Tunneling field effect transistors with a variable bandgap channel

INTEL CORP0 citations42

MANIPATRUNI SASIKANTH

1 patent