Inventor
NIKONOV DMITRI
US33 patents
⚠️ This page may combine multiple inventors who share the name “NIKONOV DMITRI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
32 patentsUS6215577B1Apr 10, 2001
Method and apparatus for optically modulating an optical beam with a multi-pass wave-guided optical modulator
INTEL CORP36 citations92
US10333523B2Jun 25, 2019
Exclusive-OR logic device with spin orbit torque effect
INTEL CORP11 citations84
US9620188B2Apr 11, 2017
MTJ spin hall MRAM bit-cell and array
INTEL CORP15 citations84
US9209288B2Dec 8, 2015
Reduced scale resonant tunneling field effect transistor
INTEL CORP10 citations84
US6351326B1Feb 26, 2002
Method and apparatus for optically modulating light utilizing a resonant cavity structure
INTEL CORP8 citations74
US12009018B2Jun 11, 2024
Transition metal dichalcogenide based spin orbit torque memory device
INTEL CORP2 citations73
US11557717B2Jan 17, 2023
Transition metal dichalcogenide based spin orbit torque memory device with magnetic insulator
INTEL CORP2 citations73
US11417830B2Aug 16, 2022
Magnetically doped spin orbit torque electrode for perpendicular magnetic random access memory
INTEL CORP5 citations73
US11398562B2Jul 26, 2022
Magnetoelectric spin orbit logic transistor with a spin filter
INTEL CORP2 citations73
US11398596B2Jul 26, 2022
Magnetic tunnel junction (MTJ) integration on backside of silicon
INTEL CORP4 citations73
US11393515B2Jul 19, 2022
Transition metal dichalcogenide based spin orbit torque memory device
INTEL CORP2 citations73
US11374163B2Jun 28, 2022
Spin orbit memory with multiferroic material
INTEL CORP4 citations73
US11294985B2Apr 5, 2022
Efficient analog in-memory matrix multiplication processor
INTEL CORP2 citations73
US11245068B2Feb 8, 2022
Transition metal dichalcogenide based magnetoelectric memory device
INTEL CORP2 citations73
US11621391B2Apr 4, 2023
Antiferromagnet based spin orbit torque memory device
INTEL CORP0 citations63
US7059782B2Jun 13, 2006
Suppressing back reflection between optical interfaces
INTEL CORP2 citations63
US11696514B2Jul 4, 2023
Transition metal dichalcogenide based magnetoelectric memory device
INTEL CORP0 citations62
US11594624B2Feb 28, 2023
Transistor structures formed with 2DEG at complex oxide interfaces
INTEL CORP0 citations62
US11502188B2Nov 15, 2022
Apparatus and method for boosting signal in magnetoelectric spin orbit logic
INTEL CORP0 citations62
US11411046B2Aug 9, 2022
Semiconductor device heat extraction by spin thermoelectrics
INTEL CORP1 citations62
US11281961B2Mar 22, 2022
Radio frequency interconnections for oscillatory neural networks
INTEL CORP0 citations62
US7141843B2Nov 28, 2006
Integratable polarization rotator
INTEL CORP3 citations61
US12020144B2Jun 25, 2024
Oscillator based neural network apparatus
INTEL CORP0 citations52
US11594270B2Feb 28, 2023
Perpendicular spin injection via spatial modulation of spin orbit coupling
INTEL CORP0 citations52
US11575083B2Feb 7, 2023
Insertion layer between spin hall effect or spin orbit torque electrode and free magnet for improved magnetic memory
INTEL CORP0 citations52
US11410021B2Aug 9, 2022
Recurrent neuron implementation based on magneto-electric spin orbit logic
INTEL CORP0 citations52
US10553268B2Feb 4, 2020
Methods and apparatus to perform complex number generation and operation on a chip
INTEL CORP0 citations52
US8933522B2Jan 13, 2015
Repeated spin current interconnects
INTEL CORP1 citations52
US10885963B2Jan 5, 2021
Ferroelectric memory-based synapses
INTEL CORP0 citations51
US10600957B2Mar 24, 2020
Method for fabricating spin logic devices from in-situ deposited magnetic stacks
INTEL CORP0 citations50
US10861861B2Dec 8, 2020
Memory including a perovskite material
INTEL CORP0 citations42
US9741832B2Aug 22, 2017
Tunneling field effect transistors with a variable bandgap channel
INTEL CORP0 citations42