Inventor

PLOMBON JOHN J

US23 patents

⚠️ This page may combine multiple inventors who share the name “PLOMBON JOHN J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PLOMBON JOHN J

INTEL CORP

Tunable gate electrode work function material for transistor applications

Catalytically enhanced atomic layer deposition process

Transition metal dichalcogenide based spin orbit torque memory device

Transition metal dichalcogenide based spin orbit torque memory device

Transition metal dichalcogenide based magnetoelectric memory device

Seam healing of metal interconnects

Transition metal dichalcogenide based magnetoelectric memory device

Apparatus and method for boosting signal in magnetoelectric spin orbit logic

Semiconductor devices having ruthenium phosphorus thin films

Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill

Using unstable nitrides to form semiconductor structures

Deposition process for iodine-doped ruthenium barrier layers

Magnetic memory device with ruthenium diffusion barrier

Diamondoid materials in quantum computing devices

Seam healing of metal interconnects

Transition metal dry etch by atomic layer removal of oxide layers for device fabrication

Using unstable nitrides to form semiconductor structures

Using unstable nitrides to form semiconductor structures

Deposition method for high-k dielectric materials

LAVOIE ADRIEN R

Tunable gate electrode work function material for transistor applications

SURFACE INTERFACE INC

Interpolated height determination in an atomic force microscope

BLACKWELL JAMES M

Method of forming a metal from a cobalt metal precursor

DOMINGUEZ JUAN E

Surface charge enhanced atomic layer deposition of pure metallic films