Inventor
LIN HSIN FU
TW21 patents
⚠️ This page may combine multiple inventors who share the name “LIN HSIN FU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
16 patentsUS12136627B2Nov 5, 2024
3DIC structure for high voltage device on a SOI substrate
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11978740B2May 7, 2024
Semiconductor-on-insulator (SOI) semiconductor structures including a high-k dielectric layer and methods of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12414380B2Sep 9, 2025
Method for forming an integrated chip (IC) including forming a through substrate via (TSV) in an isolation structure formed in a first opening that formed in a metal substrate layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12408439B2Sep 2, 2025
Integrated chip (IC) having conductive TSV extended through SOI substrate comprising a semiconductor device layer, an insulating layer and a metal layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12538554B2Jan 27, 2026
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12218189B2Feb 4, 2025
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11961890B2Apr 16, 2024
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11935918B2Mar 19, 2024
High voltage device with boosted breakdown voltage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11862670B2Jan 2, 2024
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11532701B2Dec 20, 2022
Semiconductor isolation structure and method for making the semiconductor isolation structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12300566B2May 13, 2025
Integrated chip with good thermal dissipation performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12364020B2Jul 15, 2025
Diode with reduced current leakage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US12471356B2Nov 11, 2025
Stepped isolation regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations53
US12587010B2Mar 24, 2026
Method for adjusting gate bias clamp voltage, semiconductor device, and bias clamp circuit using the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12051748B2Jul 30, 2024
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12439663B2Oct 7, 2025
Integration of low and high voltage devices on substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
MACRONIX INT CO LTD
3 patentsUS7354824B2Apr 8, 2008
Fabrication method of non-volatile memory
MACRONIX INT CO LTD2 citations61
US7307296B2Dec 11, 2007
Flash memory and fabrication method thereof
MACRONIX INT CO LTD1 citations51
US10217754B2Feb 26, 2019
Semiconductor device and method of fabricating the same
MACRONIX INT CO LTD0 citations37