P

Inventor

LIN HSIN FU

TW21 patents
⚠️ This page may combine multiple inventors who share the name “LIN HSIN FU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

16 patents
US12136627B2Nov 5, 2024

3DIC structure for high voltage device on a SOI substrate

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11978740B2May 7, 2024

Semiconductor-on-insulator (SOI) semiconductor structures including a high-k dielectric layer and methods of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12414380B2Sep 9, 2025

Method for forming an integrated chip (IC) including forming a through substrate via (TSV) in an isolation structure formed in a first opening that formed in a metal substrate layer

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12408439B2Sep 2, 2025

Integrated chip (IC) having conductive TSV extended through SOI substrate comprising a semiconductor device layer, an insulating layer and a metal layer

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12538554B2Jan 27, 2026

Semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12218189B2Feb 4, 2025

Semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11961890B2Apr 16, 2024

Semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11935918B2Mar 19, 2024

High voltage device with boosted breakdown voltage

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11862670B2Jan 2, 2024

Semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11532701B2Dec 20, 2022

Semiconductor isolation structure and method for making the semiconductor isolation structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12300566B2May 13, 2025

Integrated chip with good thermal dissipation performance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12364020B2Jul 15, 2025

Diode with reduced current leakage

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US12471356B2Nov 11, 2025

Stepped isolation regions

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations53
US12587010B2Mar 24, 2026

Method for adjusting gate bias clamp voltage, semiconductor device, and bias clamp circuit using the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12051748B2Jul 30, 2024

Semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12439663B2Oct 7, 2025

Integration of low and high voltage devices on substrate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50

MACRONIX INT CO LTD

3 patents

PEACE SHIP INTERNAT ENTPR CO L

1 patent

(unassigned)

1 patent