Inventor
WIEGAND CHRISTOPHER J
US28 patents
⚠️ This page may combine multiple inventors who share the name “WIEGAND CHRISTOPHER J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
26 patentsUS9418898B2Aug 16, 2016
Integrated circuits with selective gate electrode recess
INTEL CORP4 citations83
US11018222B1May 25, 2021
Metallization in integrated circuit structures
INTEL CORP16 citations82
US11107908B2Aug 31, 2021
Transistors with metal source and drain contacts including a Heusler alloy
INTEL CORP5 citations73
US11056593B2Jul 6, 2021
Semiconductor devices with metal contacts including crystalline alloys
INTEL CORP3 citations73
US10411068B2Sep 10, 2019
Electrical contacts for magnetoresistive random access memory devices
INTEL CORP3 citations73
US10340445B2Jul 2, 2019
PSTTM device with bottom electrode interface material
INTEL CORP5 citations73
US10326075B2Jun 18, 2019
PSTTM device with multi-layered filter stack
INTEL CORP2 citations73
US11404630B2Aug 2, 2022
Perpendicular spin transfer torque memory (pSTTM) devices with enhanced stability and method to form same
INTEL CORP2 citations72
US10651093B2May 12, 2020
Integrated circuits with recessed gate electrodes
INTEL CORP2 citations72
US10020232B2Jul 10, 2018
Integrated circuits with recessed gate electrodes
INTEL CORP2 citations72
US10559744B2Feb 11, 2020
Texture breaking layer to decouple bottom electrode from PMTJ device
INTEL CORP2 citations71
US11063151B2Jul 13, 2021
Metal chemical vapor deposition approaches for fabricating wrap-around contacts and resulting structures
INTEL CORP0 citations62
US11031545B2Jun 8, 2021
High stability free layer for perpendicular spin torque transfer memory
INTEL CORP0 citations62
US10868233B2Dec 15, 2020
Approaches for strain engineering of perpendicular magnetic tunnel junctions (pMTJs) and the resulting structures
INTEL CORP1 citations62
US10418415B2Sep 17, 2019
Interconnect capping process for integration of MRAM devices and the resulting structures
INTEL CORP1 citations62
US12165928B2Dec 10, 2024
Integrated circuits with recessed gate electrodes
INTEL CORP0 citations61
US11183432B2Nov 23, 2021
Integrated circuits with recessed gate electrodes
INTEL CORP0 citations61
US11616192B2Mar 28, 2023
Magnetic memory devices with a transition metal dopant at an interface of free magnetic layers and methods of fabrication
INTEL CORP0 citations57
US10847714B2Nov 24, 2020
PSTTM device with multi-layered filter stack
INTEL CORP0 citations52
US10732217B2Aug 4, 2020
Ferromagnetic resonance testing of buried magnetic layers of whole wafer
INTEL CORP0 citations52
US10580970B2Mar 3, 2020
PSTTM device with free magnetic layers coupled through a metal layer having high temperature stability
INTEL CORP0 citations52
US10770651B2Sep 8, 2020
Perpendicular spin transfer torque memory (PSTTM) devices with enhanced perpendicular anisotropy and methods to form same
INTEL CORP0 citations51
US10636960B2Apr 28, 2020
Strained perpendicular magnetic tunnel junction devices
INTEL CORP0 citations50
US10079266B2Sep 18, 2018
Modulation of magnetic properties through implantation and associated structures
INTEL CORP1 citations48
US11489112B2Nov 1, 2022
Resistive random access memory device and methods of fabrication
INTEL CORP0 citations43
US10256395B2Apr 9, 2019
Capped magnetic memory
INTEL CORP0 citations40