Inventor

LIU MARK Y

US32 patents

⚠️ This page may combine multiple inventors who share the name “LIU MARK Y”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIU MARK Y

INTEL CORP

Forming ultra-shallow junctions

Arrangements incorporating laser-induced cleaving

Extension of shallow trench isolation by ion implantation

Extension of shallow trench isolation by ion implantation

Transistors with high concentration of boron doped germanium

Integrated circuit annealing methods and apparatus

Method and apparatus for laser annealing

Transistors with high concentration of germanium

Pulsed laser anneal process for transistors with partial melt of a raised source-drain

Highly-selective metal etchants

Integrated circuits with selective gate electrode recess

Sacrificial annealing layer for a semiconductor device and a method of fabrication

Pulsed laser anneal process for transistor with partial melt of a raised source-drain

Creating shallow junction transistors

Integrated circuits with recessed gate electrodes

Integrated circuits with recessed gate electrodes

Method for fabricating metal gate structures

Integrated circuits with recessed gate electrodes

Integrated circuits with recessed gate electrodes

Diffused tip extension transistor

Capping layer for a semiconductor device and a method of fabrication

Sacrificial annealing layer for a semiconductor device and a method of fabrication

Enhanced dislocation stress transistor

Enhanced dislocation stress transistor

Enhanced dislocation stress transistor

Diffused tip extension transistor

Diffused tip extension transistor

JENSEN JACOB

Pulsed laser anneal process for transistors with partial melt of a raised source-drain

Selective laser annealing process for buried regions in a MOS device

MURTHY ANAND S

Transistors with high concentration of boron doped germanium

MUKHERJEE SRIJIT

Integrated circuits with selective gate electrode recess

JENSEN JACOB M

Method for forming superactive deactivation-resistant junction with laser anneal and multiple implants