Inventor

CHERN GEENG-CHUAN

US50 patents

⚠️ This page may combine multiple inventors who share the name “CHERN GEENG-CHUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHERN GEENG-CHUAN

HEFECHIP CORPORATION LTD

Magnetic memory device with multiple sidewall spacers covering sidewall of MTJ element and method for manufacturing the same

1.5-transistor (1.5T) one time programmable (OTP) memory with thin gate to drain dielectric and methods thereof

Magnetic memory device and method for manufacturing the same

Trench capacitor having improved capacitance and fabrication method thereof

One time programmable (OTP) bits for physically unclonable functions

One-time programmable memory device and method for operating the same

Trench capacitor having improved capacitance and fabrication method thereof

Method for fabricating semiconductor memory device with buried capacitor and fin-like electrodes

Method of fabricating magnetic memory device

One-time programmable memory device and fabrication method thereof

Semiconductor memory device with buried capacitor and fin-like electrodes

MOS transistor having lower gate-to-source/drain breakdown voltage and one-time programmable memory device using the same

Physically unclonable function circuit having lower gate-to-source/drain breakdown voltage

Stacked capacitor with horizontal and vertical fin structures and method for making the same

Semiconductor memory device with shallow buried capacitor and fabrication method thereof

APD SEMICONDUCTOR INC

Method of fabricating power rectifier device to vary operating parameters and resulting device

Schottky diode having increased active surface area and method of fabrication

Method of fabricating power rectifier device

Schottky diode having increased forward current with improved reverse bias characteristics and method of fabrication

Schottky diode having increased active surface area with improved reverse bias characteristics and method of fabrication

Power diode having improved on resistance and breakdown voltage

Power device having vertical current path with enhanced pinch-off for current limiting

Power device having reduced reverse bias leakage current

Method of fabricating power VLSI diode devices

ATMEL CORP

Fabrication process for programmable and erasable MOS memory device

Programmable and erasable MOS memory device

EPROM fabrication process forming tub regions for high voltage devices

EEPROM fabrication process

Fabrication process for programmable and erasable MOS memory device

Non-volatile floating gate memory cells

Memory device and systems and methods for selecting memory cells in the memory device

Selecting memory cells using source lines

NEXCHIP SEMICONDUCTOR CO LTD

Method for fabricating split-gate non-volatile memory

Non-volatile memory and manufacturing method for the same

Non-volatile memory and manufacturing method for the same

Non-volatile memory and manufacturing method for the same

Non-volatile memory cell, array and fabrication method

Split-gate non-volatile memory and fabrication method thereof

SILICON STORAGE TECH INC

Semiconductor memory array of floating gate memory cells with floating gates having multiple sharp edges

Method of forming different oxide thickness for high voltage transistor and memory cell tunnel dielectric

Semiconductor memory array of floating gate memory cells with vertical control gate sidewalls and insulation spacers

Non-volatile floating gate memory cell with floating gates formed as spacers, and an array thereof, and a method of manufacturing

Self aligned method of forming a semiconductor memory array of floating gate memory cells with floating gates having multiple sharp edges, and a memory array made thereby

NEXCHIP SEMICONDUCTOR CORP

MOFSET and method of fabricating same

Method of fabricating MOSFET

Current source using emitter region as base region isolation structure

DIODES INC

Integrated circuit including power diode

Integrated circuit including power diode

ADVANCED POWER DEVICES INC

Method of fabricating power rectifier device having a laterally graded P-N junction for a channel region

ADVANCED POWER DEVICES

Method of fabricating power rectifier device to vary operating parameters and resulting device