Inventor
DIETZE GERALD R
US15 patents
⚠️ This page may combine multiple inventors who share the name “DIETZE GERALD R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEH AMERICA INC
14 patentsUS6808564B2Oct 26, 2004
In-situ post epitaxial treatment process
SEH AMERICA INC239 citations98
US6375749B1Apr 23, 2002
Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth
SEH AMERICA INC441 citations95
US6338756B2Jan 15, 2002
In-situ post epitaxial treatment process
SEH AMERICA INC65 citations95
US6284986B1Sep 4, 2001
Method of determining the thickness of a layer on a silicon substrate
SEH AMERICA INC74 citations95
US6190453B1Feb 20, 2001
Growth of epitaxial semiconductor material with improved crystallographic properties
SEH AMERICA INC70 citations95
US6184154B1Feb 6, 2001
Method of processing the backside of a wafer within an epitaxial reactor chamber
SEH AMERICA INC30 citations92
US5685906ANov 11, 1997
Method and apparatus for configuring an epitaxial reactor for reduced set-up time and improved layer quality
SEH AMERICA INC38 citations86
US6562128B1May 13, 2003
In-situ post epitaxial treatment process
SEH AMERICA INC10 citations73
US6632277B2Oct 14, 2003
Optimized silicon wafer gettering for advanced semiconductor devices
SEH AMERICA INC11 citations71
US6454852B2Sep 24, 2002
High efficiency silicon wafer optimized for advanced semiconductor devices
SEH AMERICA INC9 citations71
US6471771B2Oct 29, 2002
In-situ post epitaxial treatment process
SEH AMERICA INC4 citations62
US6506667B2Jan 14, 2003
Growth of epitaxial semiconductor material with improved crystallographic properties
SEH AMERICA INC2 citations61
US6565651B2May 20, 2003
Optimized silicon wafer strength for advanced semiconductor devices
SEH AMERICA INC3 citations60
US6395085B2May 28, 2002
Purity silicon wafer for use in advanced semiconductor devices
SEH AMERICA INC3 citations60