P

Inventor

MAK ALFRED

US28 patents
⚠️ This page may combine multiple inventors who share the name “MAK ALFRED”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

24 patents
US7208413B2Apr 24, 2007

Formation of boride barrier layers using chemisorption techniques

APPLIED MATERIALS INC536 citations99
US6831004B2Dec 14, 2004

Formation of boride barrier layers using chemisorption techniques

APPLIED MATERIALS INC533 citations99
US6620723B1Sep 16, 2003

Formation of boride barrier layers using chemisorption techniques

APPLIED MATERIALS INC204 citations99
US6171661B1Jan 9, 2001

Deposition of copper with increased adhesion

APPLIED MATERIALS INC362 citations99
US6309713B1Oct 30, 2001

Deposition of tungsten nitride by plasma enhanced chemical vapor deposition

APPLIED MATERIALS INC89 citations98
US6206967B1Mar 27, 2001

Low resistivity W using B2H6 nucleation step

APPLIED MATERIALS INC311 citations98
US6402806B1Jun 11, 2002

Method for unreacted precursor conversion and effluent removal

APPLIED MATERIALS INC436 citations97
US6162715ADec 19, 2000

Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride

APPLIED MATERIALS INC136 citations97
US6099649AAug 8, 2000

Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal

APPLIED MATERIALS INC480 citations97
US6099904AAug 8, 2000

Low resistivity W using B2 H6 nucleation step

APPLIED MATERIALS INC217 citations97
US7501344B2Mar 10, 2009

Formation of boride barrier layers using chemisorption techniques

APPLIED MATERIALS INC44 citations96
US7501343B2Mar 10, 2009

Formation of boride barrier layers using chemisorption techniques

APPLIED MATERIALS INC47 citations96
US6251190B1Jun 26, 2001

Gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride

APPLIED MATERIALS INC84 citations96
US5883778AMar 16, 1999

Electrostatic chuck with fluid flow regulator

APPLIED MATERIALS INC68 citations96
US5740009AApr 14, 1998

Apparatus for improving wafer and chuck edge protection

APPLIED MATERIALS INC117 citations95
US6872429B1Mar 29, 2005

Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber

APPLIED MATERIALS INC32 citations93
US5201990AApr 13, 1993

Process for treating aluminum surfaces in a vacuum apparatus

APPLIED MATERIALS INC23 citations93
US5858464AJan 12, 1999

Methods and apparatus for minimizing excess aluminum accumulation in CVD chambers

APPLIED MATERIALS INC21 citations92
US5671117ASep 23, 1997

Electrostatic chuck

APPLIED MATERIALS INC27 citations92
US5634266AJun 3, 1997

Method of making a dielectric chuck

APPLIED MATERIALS INC23 citations92
US5673922AOct 7, 1997

Apparatus for centering substrates on support members

APPLIED MATERIALS INC52 citations91
US5509464AApr 23, 1996

Method and apparatus for cooling rectangular substrates

APPLIED MATERIALS INC23 citations91
US5316278AMay 31, 1994

Clamping ring apparatus for processing semiconductor wafers

APPLIED MATERIALS INC29 citations90
US6355106B1Mar 12, 2002

Deposition of copper with increased adhesion

APPLIED MATERIALS INC13 citations74

ARCHERS INC

2 patents

LEI LAWRENCE CHUNG-LAI

2 patents