Inventor
LEUNG CISSY
US22 patents
Patents
22 patentsUS6167834B1Jan 2, 2001
Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
APPLIED MATERIALS INC367 citations99
US5362526ANov 8, 1994
Plasma-enhanced CVD process using TEOS for depositing silicon oxide
APPLIED MATERIALS INC484 citations99
US5354715AOct 11, 1994
Thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
APPLIED MATERIALS INC132 citations99
US5213650AMay 25, 1993
Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer
APPLIED MATERIALS INC530 citations99
US5028565AJul 2, 1991
Process for CVD deposition of tungsten layer on semiconductor wafer
APPLIED MATERIALS INC387 citations99
US5000113AMar 19, 1991
Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
APPLIED MATERIALS INC1,100 citations99
US4892753AJan 9, 1990
Process for PECVD of silicon oxide using TEOS decomposition
APPLIED MATERIALS INC503 citations99
US4872947AOct 10, 1989
CVD of silicon oxide using TEOS decomposition and in-situ planarization process
APPLIED MATERIALS INC522 citations99
US6206967B1Mar 27, 2001
Low resistivity W using B2H6 nucleation step
APPLIED MATERIALS INC311 citations98
US5556476ASep 17, 1996
Controlling edge deposition on semiconductor substrates
APPLIED MATERIALS INC134 citations98
US5449410ASep 12, 1995
Plasma processing apparatus
APPLIED MATERIALS INC123 citations98
US4960488AOct 2, 1990
Reactor chamber self-cleaning process
APPLIED MATERIALS INC529 citations98
US6162715ADec 19, 2000
Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride
APPLIED MATERIALS INC136 citations97
US6099904AAug 8, 2000
Low resistivity W using B2 H6 nucleation step
APPLIED MATERIALS INC217 citations97
US6251190B1Jun 26, 2001
Gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride
APPLIED MATERIALS INC84 citations96
USRE36623EMar 21, 2000
Process for PECVD of silicon oxide using TEOS decomposition
APPLIED MATERIALS INC79 citations96
US5871811AFeb 16, 1999
Method for protecting against deposition on a selected region of a substrate
APPLIED MATERIALS INC69 citations96
US5755886AMay 26, 1998
Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing
APPLIED MATERIALS INC91 citations96
US5075256ADec 24, 1991
Process for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer
APPLIED MATERIALS INC56 citations96
US5201990AApr 13, 1993
Process for treating aluminum surfaces in a vacuum apparatus
APPLIED MATERIALS INC23 citations93
US5468298ANov 21, 1995
Bottom purge manifold for CVD tungsten process
APPLIED MATERIALS INC47 citations92
US5332443AJul 26, 1994
Lift fingers for substrate processing apparatus
APPLIED MATERIALS INC62 citations91