Inventor
ONUKI JIN
JP21 patents
⚠️ This page may combine multiple inventors who share the name “ONUKI JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
19 patentsUS4999096AMar 12, 1991
Method of and apparatus for sputtering
HITACHI LTD196 citations98
US6434008B1Aug 13, 2002
Semiconductor device
HITACHI LTD84 citations97
US5956231ASep 21, 1999
Semiconductor device having power semiconductor elements
HITACHI LTD85 citations96
US4965656AOct 23, 1990
Semiconductor device
HITACHI LTD84 citations96
US6353258B1Mar 5, 2002
Semiconductor module
HITACHI LTD65 citations95
US5175608ADec 29, 1992
Method of and apparatus for sputtering, and integrated circuit device
HITACHI LTD55 citations95
US4482912ANov 13, 1984
Stacked structure having matrix-fibered composite layers and a metal layer
HITACHI LTD62 citations95
US5539244AJul 23, 1996
Power semiconductor device
HITACHI LTD23 citations92
US6225598B1May 1, 2001
Method of high frequency pulse arc welding and apparatus therefor
HITACHI LTD52 citations91
US5019891AMay 28, 1991
Semiconductor device and method of fabricating the same
HITACHI LTD29 citations89
US4976393ADec 11, 1990
Semiconductor device and production process thereof, as well as wire bonding device used therefor
HITACHI LTD40 citations89
US5767577AJun 16, 1998
Method of solder bonding and power semiconductor device manufactured by the method
HITACHI LTD17 citations84
US4912544AMar 27, 1990
Corrosion-resistant aluminum electronic material
HITACHI LTD16 citations74
US5051812ASep 24, 1991
Semiconductor device and method for manufacturing the same
HITACHI LTD19 citations73
US4542398ASep 17, 1985
Semiconductor devices of multi-emitter type
HITACHI LTD16 citations73
US4110783AAug 29, 1978
Solder layer for a semi-conductor device consisting of at least one group V element, at least one rare element and aluminum
HITACHI LTD6 citations71
US4500904AFeb 19, 1985
Semiconductor device
HITACHI LTD11 citations70
US5153704AOct 6, 1992
Semiconductor device using annealed bonding wire
HITACHI LTD5 citations62
US4246693AJan 27, 1981
Method of fabricating semiconductor device by bonding together silicon substrate and electrode or the like with aluminum
HITACHI LTD4 citations60