P

Inventor

JUN YOUNG-HYUN

KR46 patents
⚠️ This page may combine multiple inventors who share the name “JUN YOUNG-HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

23 patents
US6667895B2Dec 23, 2003

Integrated circuit device and module with integrated circuits

SAMSUNG ELECTRONICS CO LTD176 citations99
US6654296B2Nov 25, 2003

Devices, circuits and methods for dual voltage generation using single charge pump

SAMSUNG ELECTRONICS CO LTD76 citations98
US6621315B2Sep 16, 2003

Delay locked loop circuit and method having adjustable locking resolution

SAMSUNG ELECTRONICS CO LTD89 citations97
US7581881B2Sep 1, 2009

Temperature sensor using ring oscillator and temperature detection method using the same

SAMSUNG ELECTRONICS CO LTD36 citations93
US6603687B2Aug 5, 2003

Semiconductor devices, circuits and methods for synchronizing the inputting and outputting data by internal clock signals derived from single feedback loop

SAMSUNG ELECTRONICS CO LTD21 citations93
US7092299B2Aug 15, 2006

Memory devices, systems and methods using selective on-die termination

SAMSUNG ELECTRONICS CO LTD31 citations92
US7855926B2Dec 21, 2010

Semiconductor memory device having local sense amplifier with on/off control

SAMSUNG ELECTRONICS CO LTD9 citations84
US7724073B2May 25, 2010

Charge pump circuit

SAMSUNG ELECTRONICS CO LTD8 citations84
US7453745B2Nov 18, 2008

Semiconductor memory device and latency signal generating method thereof

SAMSUNG ELECTRONICS CO LTD12 citations84
US8004311B2Aug 23, 2011

Input/output circuit and integrated circuit apparatus including the same

SAMSUNG ELECTRONICS CO LTD6 citations63
US7928795B2Apr 19, 2011

Semiconductor device for charge pumping

SAMSUNG ELECTRONICS CO LTD3 citations63
US7366822B2Apr 29, 2008

Semiconductor memory device capable of reading and writing data at the same time

SAMSUNG ELECTRONICS CO LTD6 citations63
US7349268B2Mar 25, 2008

Voltage generation circuit and semiconductor memory device including the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US6813204B2Nov 2, 2004

Semiconductor memory device comprising circuit for precharging data line

SAMSUNG ELECTRONICS CO LTD6 citations63
US6653889B2Nov 25, 2003

Voltage generating circuits and methods including shared capacitors

SAMSUNG ELECTRONICS CO LTD4 citations63
US7986251B2Jul 26, 2011

Input/output (IO) interface and method of transmitting IO data

SAMSUNG ELECTRONICS CO LTD6 citations62
US7778094B2Aug 17, 2010

Semiconductor memory device and latency signal generating method thereof

SAMSUNG ELECTRONICS CO LTD4 citations62
US7639547B2Dec 29, 2009

Semiconductor memory device for independently controlling internal supply voltages and method of using the same

SAMSUNG ELECTRONICS CO LTD6 citations62
US7589580B2Sep 15, 2009

Reference current generating method and current reference circuit

SAMSUNG ELECTRONICS CO LTD6 citations60
US7061783B2Jun 13, 2006

Content addressable memory (CAM) capable of finding errors in a CAM cell array and a method thereof

SAMSUNG ELECTRONICS CO LTD4 citations59
US8379476B2Feb 19, 2013

Semiconductor memory device for reducing ripple noise of back-bias voltage and method of driving semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations58
US7492647B2Feb 17, 2009

Voltage generation circuit and semiconductor memory device including the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US7348789B2Mar 25, 2008

Integrated circuit device with on-chip setup/hold measuring circuit

SAMSUNG ELECTRONICS CO LTD1 citations51

LG SEMICON CO LTD

8 patents

HYUNDAI ELECTRONICS IND

5 patents

GOLD STAR ELECTRONICS

2 patents

KANG UK-SONG

1 patent

PARK CHUL-WOO

1 patent

LG SEMICON LTD

1 patent

SHIN SEUNG-YONG

1 patent

SON JONG-PIL

1 patent

PARK SU-JIN

1 patent

KIM SI-HONG

1 patent

KIM JOUNG YEAL

1 patent