Inventor
JUN YOUNG-HYUN
KR46 patents
⚠️ This page may combine multiple inventors who share the name “JUN YOUNG-HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
23 patentsUS6667895B2Dec 23, 2003
Integrated circuit device and module with integrated circuits
SAMSUNG ELECTRONICS CO LTD176 citations99
US6654296B2Nov 25, 2003
Devices, circuits and methods for dual voltage generation using single charge pump
SAMSUNG ELECTRONICS CO LTD76 citations98
US6621315B2Sep 16, 2003
Delay locked loop circuit and method having adjustable locking resolution
SAMSUNG ELECTRONICS CO LTD89 citations97
US7581881B2Sep 1, 2009
Temperature sensor using ring oscillator and temperature detection method using the same
SAMSUNG ELECTRONICS CO LTD36 citations93
US6603687B2Aug 5, 2003
Semiconductor devices, circuits and methods for synchronizing the inputting and outputting data by internal clock signals derived from single feedback loop
SAMSUNG ELECTRONICS CO LTD21 citations93
US7092299B2Aug 15, 2006
Memory devices, systems and methods using selective on-die termination
SAMSUNG ELECTRONICS CO LTD31 citations92
US7855926B2Dec 21, 2010
Semiconductor memory device having local sense amplifier with on/off control
SAMSUNG ELECTRONICS CO LTD9 citations84
US7724073B2May 25, 2010
Charge pump circuit
SAMSUNG ELECTRONICS CO LTD8 citations84
US7453745B2Nov 18, 2008
Semiconductor memory device and latency signal generating method thereof
SAMSUNG ELECTRONICS CO LTD12 citations84
US8004311B2Aug 23, 2011
Input/output circuit and integrated circuit apparatus including the same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7928795B2Apr 19, 2011
Semiconductor device for charge pumping
SAMSUNG ELECTRONICS CO LTD3 citations63
US7366822B2Apr 29, 2008
Semiconductor memory device capable of reading and writing data at the same time
SAMSUNG ELECTRONICS CO LTD6 citations63
US7349268B2Mar 25, 2008
Voltage generation circuit and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US6813204B2Nov 2, 2004
Semiconductor memory device comprising circuit for precharging data line
SAMSUNG ELECTRONICS CO LTD6 citations63
US6653889B2Nov 25, 2003
Voltage generating circuits and methods including shared capacitors
SAMSUNG ELECTRONICS CO LTD4 citations63
US7986251B2Jul 26, 2011
Input/output (IO) interface and method of transmitting IO data
SAMSUNG ELECTRONICS CO LTD6 citations62
US7778094B2Aug 17, 2010
Semiconductor memory device and latency signal generating method thereof
SAMSUNG ELECTRONICS CO LTD4 citations62
US7639547B2Dec 29, 2009
Semiconductor memory device for independently controlling internal supply voltages and method of using the same
SAMSUNG ELECTRONICS CO LTD6 citations62
US7589580B2Sep 15, 2009
Reference current generating method and current reference circuit
SAMSUNG ELECTRONICS CO LTD6 citations60
US7061783B2Jun 13, 2006
Content addressable memory (CAM) capable of finding errors in a CAM cell array and a method thereof
SAMSUNG ELECTRONICS CO LTD4 citations59
US8379476B2Feb 19, 2013
Semiconductor memory device for reducing ripple noise of back-bias voltage and method of driving semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations58
US7492647B2Feb 17, 2009
Voltage generation circuit and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7348789B2Mar 25, 2008
Integrated circuit device with on-chip setup/hold measuring circuit
SAMSUNG ELECTRONICS CO LTD1 citations51
LG SEMICON CO LTD
8 patentsUS5966337AOct 12, 1999
Method for overdriving bit line sense amplifier
LG SEMICON CO LTD26 citations93
US5905402AMay 18, 1999
Voltage pump circuit having an independent well-bias voltage
LG SEMICON CO LTD48 citations93
US5841725ANov 24, 1998
Charge pump circuit for a semiconductor memory device
LG SEMICON CO LTD55 citations93
US6060928AMay 9, 2000
Device for delaying clock signal
LG SEMICON CO LTD51 citations92
US6031402AFeb 29, 2000
Clock synchronizing circuit with power save mode
LG SEMICON CO LTD17 citations92
US5640354AJun 17, 1997
Dynamic random access memory having self-test function
LG SEMICON CO LTD47 citations92
US6154079ANov 28, 2000
Negative delay circuit operable in wide band frequency
LG SEMICON CO LTD14 citations74
US5883848AMar 16, 1999
Semiconductor device having multiple sized memory arrays
LG SEMICON CO LTD7 citations74
HYUNDAI ELECTRONICS IND
5 patentsUS6294950B1Sep 25, 2001
Charge pump circuit having variable oscillation period
HYUNDAI ELECTRONICS IND32 citations93
US6111808AAug 29, 2000
Semiconductor memory device
HYUNDAI ELECTRONICS IND44 citations92
US6473346B1Oct 29, 2002
Self burn-in circuit for semiconductor memory
HYUNDAI ELECTRONICS IND20 citations91
US6177828B1Jan 23, 2001
Charge pump circuit for a semiconductor memory device
HYUNDAI ELECTRONICS IND26 citations89
US6184733B1Feb 6, 2001
Clock synchronizing circuit
HYUNDAI ELECTRONICS IND15 citations83