Inventor
BHANDARI GAUTAM
US20 patents
⚠️ This page may combine multiple inventors who share the name “BHANDARI GAUTAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED TECH MATERIALS
19 patentsUS6379748B1Apr 30, 2002
Tantalum amide precursors for deposition of tantalum nitride on a substrate
ADVANCED TECH MATERIALS211 citations99
US6015917AJan 18, 2000
Tantalum amide precursors for deposition of tantalum nitride on a substrate
ADVANCED TECH MATERIALS317 citations99
US5919522AJul 6, 1999
Growth of BaSrTiO3 using polyamine-based precursors
ADVANCED TECH MATERIALS149 citations99
US6006582ADec 28, 1999
Hydrogen sensor utilizing rare earth metal thin film detection element
ADVANCED TECH MATERIALS137 citations98
US5916359AJun 29, 1999
Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition
ADVANCED TECH MATERIALS68 citations96
US6319565B1Nov 20, 2001
Stable hydride source compositions for manufacture of semiconductor devices and structures
ADVANCED TECH MATERIALS25 citations92
US6178925B1Jan 30, 2001
Burst pulse cleaning method and apparatus for liquid delivery system
ADVANCED TECH MATERIALS60 citations92
US6146608ANov 14, 2000
Stable hydride source compositions for manufacture of semiconductor devices and structures
ADVANCED TECH MATERIALS39 citations92
US6102993AAug 15, 2000
Copper precursor composition and process for manufacture of microelectronic device structures
ADVANCED TECH MATERIALS44 citations92
US6099653AAug 8, 2000
Liquid reagent delivery system with constant thermal loading of vaporizer
ADVANCED TECH MATERIALS25 citations92
US6005127ADec 21, 1999
Antimony/Lewis base adducts for Sb-ion implantation and formation of antimonide films
ADVANCED TECH MATERIALS42 citations92
US6001172ADec 14, 1999
Apparatus and method for the in-situ generation of dopants
ADVANCED TECH MATERIALS35 citations92
US5902639AMay 11, 1999
Method of forming bismuth-containing films by using bismuth amide compounds
ADVANCED TECH MATERIALS33 citations92
US6245151B1Jun 12, 2001
Liquid delivery system comprising upstream pressure control means
ADVANCED TECH MATERIALS34 citations90
US6284652B1Sep 4, 2001
Adhesion promotion method for electro-chemical copper metallization in IC applications
ADVANCED TECH MATERIALS35 citations89
US5859274AJan 12, 1999
Anhydrous mononuclear tris(β-diketonate) bismuth compositions for deposition of bismuth-containing films, and method of making the same
ADVANCED TECH MATERIALS31 citations89
US6822107B1Nov 23, 2004
Chemical vapor deposition precursors for deposition of copper
ADVANCED TECH MATERIALS10 citations74
US6645860B2Nov 11, 2003
Adhesion promotion method for CVD copper metallization in IC applications
ADVANCED TECH MATERIALS7 citations74
US6355562B1Mar 12, 2002
Adhesion promotion method for CVD copper metallization in IC applications
ADVANCED TECH MATERIALS13 citations74