Inventor
ONISHI TOSHIKAZU
JP34 patents
⚠️ This page may combine multiple inventors who share the name “ONISHI TOSHIKAZU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
13 patentsUS6841409B2Jan 11, 2005
Group III-V compound semiconductor and group III-V compound semiconductor device using the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD59 citations96
US6661824B2Dec 9, 2003
Semiconductor laser device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations84
US7402843B2Jul 22, 2008
Group III-V compound semiconductor and group III-V compound semiconductor device using the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations74
US6834068B2Dec 21, 2004
Semiconductor laser device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations74
US7436874B2Oct 14, 2008
Laser device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations63
US7391798B2Jun 24, 2008
Semiconductor laser device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US7215691B2May 8, 2007
Semiconductor laser device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US6991955B2Jan 31, 2006
Compound semiconductor, method for producing the same, semiconductor light-emitting device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US6930024B2Aug 16, 2005
Semiconductor laser device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
US7402447B2Jul 22, 2008
Semiconductor laser device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD0 citations52
US7268007B2Sep 11, 2007
Compound semiconductor, method for manufacturing the same, semiconductor device, and method for manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD0 citations52
US7041524B2May 9, 2006
Semiconductor laser device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1 citations52
US7037743B2May 2, 2006
Semiconductor device and method for producing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD0 citations52
CANON KK
6 patentsUS5788819AAug 4, 1998
Method for driving liquid, and method and apparatus for mixing and agitation employing the method
CANON KK94 citations98
US5495105AFeb 27, 1996
Method and apparatus for particle manipulation, and measuring apparatus utilizing the same
CANON KK135 citations98
US6379211B2Apr 30, 2002
Method for manufacturing electron emission element, electron source, and image forming apparatus
CANON KK53 citations96
US6267636B1Jul 31, 2001
Method for manufacturing electron emission element, electron source, and image forming apparatus
CANON KK72 citations96
US7021981B2Apr 4, 2006
Method for manufacturing electron emission element, electron source, and image forming apparatus
CANON KK34 citations93
US5719027AFeb 17, 1998
Labeled complex and method of analysis therewith
CANON KK16 citations74
OJI PAPER CO
6 patentsUS7745374B2Jun 29, 2010
Thermal transfer receiving sheet, production method thereof and image forming method using the sheet
OJI PAPER CO8 citations83
US7638462B2Dec 29, 2009
Thermal transfer receiving sheet
OJI PAPER CO8 citations82
US6110865AAug 29, 2000
Recording composite sheet
OJI PAPER CO9 citations70
US6019866AFeb 1, 2000
Thermal transfer image recording sheet and method of producing same
OJI PAPER CO6 citations63
US7795177B2Sep 14, 2010
Thermal transfer receiving sheet and its manufacturing method
OJI PAPER CO2 citations61
US8043994B2Oct 25, 2011
Thermal transfer receiving sheet and its manufacturing method
OJI PAPER CO0 citations51
PANASONIC CORP
4 patentsUS7873090B2Jan 18, 2011
Surface emitting laser, photodetector and optical communication system using the same
PANASONIC CORP15 citations84
US7538357B2May 26, 2009
Semiconductor light emitting device
PANASONIC CORP6 citations62
US7495262B2Feb 24, 2009
Compound semiconductor, method for producing the same, semiconductor light-emitting device and method for fabricating the same
PANASONIC CORP0 citations52
US7459719B2Dec 2, 2008
Superlattice optical semiconductor device where each barrier layer has high content of group III elements in center portion and low content near well layer
PANASONIC CORP0 citations42