P

Inventor

HUANG YEN-CHIEH

TW57 patents
⚠️ This page may combine multiple inventors who share the name “HUANG YEN-CHIEH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

31 patents
US11616142B2Mar 28, 2023

Semiconductor device with self-aligned wavy contact profile and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations86
US11527649B1Dec 13, 2022

Ferroelectric field effect transistor devices and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations85
US11195951B2Dec 7, 2021

Semiconductor device with self-aligned wavy contact profile and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9335365B2May 10, 2016

Split gate structure and method of using same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations81
US12089415B2Sep 10, 2024

Metal layers for increasing polarization of ferroelectric memory device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11450733B2Sep 20, 2022

Three dimensional metal insulator metal capacitor structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12363912B2Jul 15, 2025

Ferroelectric memory device with a metal layer having a crystal orientation for improving ferroelectric polarization and method for forming the ferroelectric memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12144259B2Nov 12, 2024

Organic gate TFT-type stress sensors and method of making and using the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12131943B2Oct 29, 2024

Semiconductor structure having epitaxial structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12027601B2Jul 2, 2024

Method for forming semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11903217B2Feb 13, 2024

Ferroelectric memory device with a metal layer having a crystal orientation for improving ferroelectric polarization and method for forming the ferroelectric memory device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11777010B2Oct 3, 2023

Semiconductor structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11756824B2Sep 12, 2023

Semiconductor structure having epitaxial structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11037818B2Jun 15, 2021

Semiconductor structure having epitaxial structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12550383B2Feb 10, 2026

Double gate ferroelectric field effect transistor devices and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12543560B2Feb 3, 2026

Semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12382640B2Aug 5, 2025

Memory device and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12167609B2Dec 10, 2024

Semiconductor structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12150309B2Nov 19, 2024

Double gate metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12136673B2Nov 5, 2024

Semiconductor device with self-aligned wavy contact profile and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12119402B2Oct 15, 2024

Semiconductor devices with ferroelectric layer and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12087811B2Sep 10, 2024

Three dimensional metal insulator metal capacitor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908936B2Feb 20, 2024

Double gate ferroelectric field effect transistor devices and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11824121B2Nov 21, 2023

Semiconductor device with self-aligned wavy contact profile and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11817498B2Nov 14, 2023

Ferroelectric field effect transistor devices and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11810956B2Nov 7, 2023

In-situ thermal annealing of electrode to form seed layer for improving FeRAM performance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11735471B2Aug 22, 2023

Semiconductor structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11670715B2Jun 6, 2023

Semiconductor devices with ferroelectric layer and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12402379B2Aug 26, 2025

Epitaxial layer under a gate structure of a transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11901415B2Feb 13, 2024

Transistor isolation structures

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations59
US12078607B2Sep 3, 2024

Wide-bandgap semiconductor layer characterization

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

(unassigned)

7 patents

MOBILETRON ELECTRONICS CO LTD

2 patents

UNIV TSINGHUA

2 patents

NAT UNIV TSING HUA

2 patents

UNIV NAT TSING HUA

2 patents

HUGA OPTOTECH INC

1 patent

DAI JING JIE

1 patent

HUANG YEN-CHIEH

1 patent

CHEN PO-HUNG

1 patent

Showing the top 50 of 57 patents by PatentIndex Score.