Inventor
YUGAMI JIRO
JP33 patents
⚠️ This page may combine multiple inventors who share the name “YUGAMI JIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS TECH CORP
11 patentsUS6710383B2Mar 23, 2004
MISFET semiconductor device having a high dielectric constant insulating film with tapered end portions
RENESAS TECH CORP13 citations93
US6833582B2Dec 21, 2004
Nonvolatile semiconductor memory device
RENESAS TECH CORP52 citations91
US6833296B2Dec 21, 2004
Method of making a MISFET semiconductor device having a high dielectric constant insulating film with tapered end portions
RENESAS TECH CORP2 citations63
US6849513B2Feb 1, 2005
Semiconductor device and production method thereof
RENESAS TECH CORP2 citations62
US6777296B2Aug 17, 2004
Semiconductor device and manufacturing method thereof
RENESAS TECH CORP2 citations62
US6723625B2Apr 20, 2004
Semiconductor device having thin electrode laye adjacent gate insulator and method of manufacture
RENESAS TECH CORP2 citations62
US7193281B2Mar 20, 2007
Semiconductor device and process for producing the same
RENESAS TECH CORP0 citations52
US7064400B2Jun 20, 2006
Semiconductor device and process for producing the same
RENESAS TECH CORP0 citations52
US7741201B2Jun 22, 2010
Semiconductor device and method of manufacturing a gate stack
RENESAS TECH CORP1 citations51
US7569890B2Aug 4, 2009
Manufacturing method of CMOS type semiconductor device, and CMOS type semiconductor device
RENESAS TECH CORP0 citations51
US7537987B2May 26, 2009
Semiconductor device manufacturing method
RENESAS TECH CORP0 citations39
HITACHI LTD
7 patentsUS6521943B1Feb 18, 2003
Semiconductor device having thin electrode layer adjacent gate insulator and method of manufacture
HITACHI LTD37 citations96
US5091761AFeb 25, 1992
Semiconductor device having an arrangement of IGFETs and capacitors stacked thereover
HITACHI LTD70 citations96
US6953728B2Oct 11, 2005
Semiconductor device and method of manufacturing thereof
HITACHI LTD17 citations92
US6727146B2Apr 27, 2004
Semiconductor device and method of manufacturing thereof
HITACHI LTD17 citations92
US6656804B2Dec 2, 2003
Semiconductor device and production method thereof
HITACHI LTD26 citations92
US6144062ANov 7, 2000
Semiconductor device having thin electrode layer adjacent gate insulator and method of manufacture
HITACHI LTD35 citations92
US4989056AJan 29, 1991
Semiconductor capacitor
HITACHI LTD9 citations74
RENESAS ELECTRONICS CORP
5 patentsUS7915686B2Mar 29, 2011
Semiconductor device and manufacturing of the same
RENESAS ELECTRONICS CORP8 citations83
US9343527B2May 17, 2016
Semiconductor device including an isolation film buried in a groove
RENESAS ELECTRONICS CORP3 citations73
US7863125B2Jan 4, 2011
Manufacturing method of CMOS type semiconductor device, and CMOS type semiconductor device
RENESAS ELECTRONICS CORP3 citations61
US7855134B2Dec 21, 2010
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP4 citations61
US8823110B2Sep 2, 2014
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP0 citations51
HITACHI ULSI SYS CO LTD
3 patentsUS7196384B2Mar 27, 2007
Semiconductor device and method for manufacturing thereof
HITACHI ULSI SYS CO LTD1 citations63
US6897104B2May 24, 2005
Semiconductor device and method for manufacturing thereof
HITACHI ULSI SYS CO LTD3 citations63
US6982468B2Jan 3, 2006
Semiconductor device and method for manufacturing thereof
HITACHI ULSI SYS CO LTD0 citations52
YUGAMI JIRO
2 patentsUS8664053B2Mar 4, 2014
Semiconductor device with isolation structures and gate insulating film that contain an element for threshold reduction and method of manufacturing the same
YUGAMI JIRO1 citations47
US8552507B2Oct 8, 2013
Semiconductor device and method of manufacturing the same
YUGAMI JIRO0 citations36