P

Inventor

TSUCHIYA RYUTA

JP31 patents
⚠️ This page may combine multiple inventors who share the name “TSUCHIYA RYUTA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HITACHI LTD

16 patents
US7385436B2Jun 10, 2008

Fully depleted silicon on insulator semiconductor devices

HITACHI LTD33 citations92
US6667199B2Dec 23, 2003

Semiconductor device having a replacement gate type field effect transistor and its manufacturing method

HITACHI LTD31 citations92
US7531853B2May 12, 2009

Semiconductor device and manufacturing method of the same

HITACHI LTD9 citations84
US7511558B2Mar 31, 2009

Semiconductor devices utilizing double gated fully depleted silicon on insulator MOS transistors

HITACHI LTD12 citations84
US6744099B2Jun 1, 2004

MIS semiconductor device and manufacturing method thereof

HITACHI LTD9 citations74
US9799734B2Oct 24, 2017

Semiconductor device and manufacturing method for same, as well as power conversion device

HITACHI LTD4 citations72
US8710550B2Apr 29, 2014

Semiconductor device with hetero-junction bodies

HITACHI LTD6 citations72
US9941430B2Apr 10, 2018

Silicon-based quantum dot device

HITACHI LTD2 citations70
US9825166B2Nov 21, 2017

Silicon carbide semiconductor device and method for producing same

HITACHI LTD3 citations70
US7812398B2Oct 12, 2010

Semiconductor device including a P-type field-effect transistor

HITACHI LTD3 citations63
US7001818B2Feb 21, 2006

MIS semiconductor device and manufacturing method thereof

HITACHI LTD5 citations63
US9029979B2May 12, 2015

4h-SiC semiconductor element and semiconductor device

HITACHI LTD3 citations62
US8350328B2Jan 8, 2013

Semiconductor device and method of manufacturing the same

HITACHI LTD4 citations62
US12396374B2Aug 19, 2025

Semiconductor device comprising plurality of diffusion layer electrodes with different conductivities and gate electrodes

HITACHI LTD0 citations48
US12169759B2Dec 17, 2024

Quantum information processing device

HITACHI LTD0 citations48
US9263571B2Feb 16, 2016

Silicon carbide semiconductor device and manufacturing method thereof

HITACHI LTD0 citations41

RENESAS ELECTRONICS CORP

4 patents

TSUCHIYA RYUTA

3 patents

IWAMATSU TOSHIAKI

2 patents

WATANABE KEIJI

2 patents

HITACHI HIGH TECH CORP

1 patent

MORITA YUSUKE

1 patent

ISHIGAKI TAKASHI

1 patent

SUGII NOBUYUKI

1 patent