Inventor
SATOH SHINICHI
JP79 patents
⚠️ This page may combine multiple inventors who share the name “SATOH SHINICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
28 patentsUS5834817ANov 10, 1998
Field effect transistor with a shaped gate electrode
MITSUBISHI ELECTRIC CORP42 citations96
US5272100ADec 21, 1993
Field effect transistor with T-shaped gate electrode and manufacturing method therefor
MITSUBISHI ELECTRIC CORP61 citations96
US5084752AJan 28, 1992
Semiconductor device having bonding pad comprising buffer layer
MITSUBISHI ELECTRIC CORP59 citations96
US5051948ASep 24, 1991
Content addressable memory device
MITSUBISHI ELECTRIC CORP81 citations96
US5014110AMay 7, 1991
Wiring structures for semiconductor memory device
MITSUBISHI ELECTRIC CORP81 citations96
US4994893AFeb 19, 1991
Field effect transistor substantially coplanar surface structure
MITSUBISHI ELECTRIC CORP62 citations96
US5288661AFeb 22, 1994
Semiconductor device having bonding pad comprising buffer layer
MITSUBISHI ELECTRIC CORP28 citations93
US5049959ASep 17, 1991
Semiconductor integrated circuit device
MITSUBISHI ELECTRIC CORP22 citations93
US5930614AJul 27, 1999
Method for forming MOS device having field shield isolation
MITSUBISHI ELECTRIC CORP22 citations92
US5650342AJul 22, 1997
Method of making a field effect transistor with a T shaped polysilicon gate electrode
MITSUBISHI ELECTRIC CORP18 citations92
US5521419AMay 28, 1996
Semiconductor device having field shield element isolating structure and method of manufacturing the same
MITSUBISHI ELECTRIC CORP36 citations92
US5225704AJul 6, 1993
Field shield isolation structure for semiconductor memory device and method for manufacturing the same
MITSUBISHI ELECTRIC CORP37 citations92
US5177571AJan 5, 1993
Ldd mosfet with particularly shaped gate electrode immune to hot electron effect
MITSUBISHI ELECTRIC CORP37 citations92
US5164803ANov 17, 1992
Cmos semiconductor device with an element isolating field shield
MITSUBISHI ELECTRIC CORP36 citations92
US5089863AFeb 18, 1992
Field effect transistor with T-shaped gate electrode
MITSUBISHI ELECTRIC CORP33 citations92
US5471080ANov 28, 1995
Field effect transistor with a shaped gate electrode
MITSUBISHI ELECTRIC CORP19 citations82
US5094965AMar 10, 1992
Field effect transistor having substantially coplanar surface structure and a manufacturing method therefor
MITSUBISHI ELECTRIC CORP21 citations82
US5067000ANov 19, 1991
Semiconductor device having field shield isolation
MITSUBISHI ELECTRIC CORP17 citations82
US5896424AApr 20, 1999
Interference radio wave elimination device and interference radio wave elimination method
MITSUBISHI ELECTRIC CORP12 citations74
US5543646AAug 6, 1996
Field effect transistor with a shaped gate electrode
MITSUBISHI ELECTRIC CORP11 citations74
US5459344AOct 17, 1995
Stacked capacitor type semiconductor memory device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP12 citations74
US5278437AJan 11, 1994
Stacked capacitor type semiconductor memory device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP7 citations74
US5183774AFeb 2, 1993
Method of making a semiconductor memory device
MITSUBISHI ELECTRIC CORP14 citations74
US5181094AJan 19, 1993
Complementary semiconductor device having improved device isolating region
MITSUBISHI ELECTRIC CORP9 citations74
US5180683AJan 19, 1993
Method of manufacturing stacked capacitor type semiconductor memory device
MITSUBISHI ELECTRIC CORP9 citations74
US5097310AMar 17, 1992
Complementary semiconductor device having improved device isolating region
MITSUBISHI ELECTRIC CORP10 citations74
US5027173AJun 25, 1991
Semiconductor memory device with two separate gates per block
MITSUBISHI ELECTRIC CORP12 citations74
US4998161AMar 5, 1991
LDD MOS device having an element separation region having an electrostatic screening electrode
MITSUBISHI ELECTRIC CORP10 citations74
FUJITSU LTD
9 patentsUS6189796B1Feb 20, 2001
System and method of reading bar code with two scanning beams
FUJITSU LTD23 citations93
US6189794B1Feb 20, 2001
Bar code reader determining unit for determining the true changing point and correcting unit for correcting the false changing point to correct changing point
FUJITSU LTD17 citations93
US5942740AAug 24, 1999
Method and apparatus for reading bar codes
FUJITSU LTD32 citations93
US6619548B1Sep 16, 2003
System and method of reading bar code with two scanning beams
FUJITSU LTD9 citations74
US6145744ANov 14, 2000
Method of reading bar code
FUJITSU LTD6 citations74
US6142377ANov 7, 2000
Method of reading bar code
FUJITSU LTD8 citations74
US6032865AMar 7, 2000
Method of reading bar code
FUJITSU LTD9 citations74
US5965864AOct 12, 1999
Slicing ratio controlling circuit
FUJITSU LTD11 citations74
US5895908AApr 20, 1999
Bar code scanner with laser power down feature
FUJITSU LTD9 citations74
SHINETSU CHEMICAL CO
3 patentsUS5194648AMar 16, 1993
Fluorinated carboxylic acid derivatives and methods for making
SHINETSU CHEMICAL CO7 citations74
US5126420AJun 30, 1992
Rtv organopolysiloxane compositions
SHINETSU CHEMICAL CO7 citations74
US4960847AOct 2, 1990
Room temperature vulcanizable organopolysiloxane composition
SHINETSU CHEMICAL CO17 citations74
CANON KK
2 patentsHITACHI CONSTRUCTION MACHINERY
2 patentsUS4875337AOct 24, 1989
Construction machine dual-dump hydraulic circuit with piloted arm-boom cylinder supply priority switching valves
HITACHI CONSTRUCTION MACHINERY46 citations93
US4753158AJun 28, 1988
Pilot hydraulic system for operating directional control valve
HITACHI CONSTRUCTION MACHINERY22 citations82
SHIN NISSO KAKO CO LTD
2 patentsMITSUBISHI DENKI KABUSHIKI KAS
1 patentNIPPON SODA CO
1 patentOKI ELECTRIC IND CO LTD
1 patentTOSOH QUARTZ CORP
1 patentShowing the top 50 of 79 patents by PatentIndex Score.