Inventor
SON NAK-JIN
KR16 patents
⚠️ This page may combine multiple inventors who share the name “SON NAK-JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
14 patentsUS7223649B2May 29, 2007
Method of fabricating transistor of DRAM semiconductor device
SAMSUNG ELECTRONICS CO LTD59 citations97
US9159730B2Oct 13, 2015
Methods for fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD11 citations84
US7524733B2Apr 28, 2009
Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7221023B2May 22, 2007
Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same
SAMSUNG ELECTRONICS CO LTD11 citations84
US11094800B2Aug 17, 2021
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US9564340B2Feb 7, 2017
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations68
US11715786B2Aug 1, 2023
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US7268043B2Sep 11, 2007
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US7009255B2Mar 7, 2006
Semiconductor device having punch-through structure off-setting the edge of the gate electrodes
SAMSUNG ELECTRONICS CO LTD1 citations62
US6869891B2Mar 22, 2005
Semiconductor device having groove and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US9548260B2Jan 17, 2017
Semiconductor devices including conductive plug
SAMSUNG ELECTRONICS CO LTD1 citations52
US7259069B2Aug 21, 2007
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7833864B2Nov 16, 2010
Method of doping polysilicon layer that utilizes gate insulation layer to prevent diffusion of ion implanted impurities into underlying semiconductor substrate
SAMSUNG ELECTRONICS CO LTD0 citations51
US9466703B2Oct 11, 2016
Method for fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations41