P

Inventor

SEO JUN

KR32 patents
⚠️ This page may combine multiple inventors who share the name “SEO JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

24 patents
US6239022B1May 29, 2001

Method of fabricating a contact in a semiconductor device

SAMSUNG ELECTRONICS CO LTD53 citations96
US7531449B2May 12, 2009

Method of forming fine patterns using double patterning process

SAMSUNG ELECTRONICS CO LTD29 citations92
US6573602B2Jun 3, 2003

Semiconductor device with a self-aligned contact and a method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD30 citations92
US7667221B2Feb 23, 2010

Phase change memory devices and methods for fabricating the same

SAMSUNG ELECTRONICS CO LTD11 citations84
US7524733B2Apr 28, 2009

Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7221023B2May 22, 2007

Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same

SAMSUNG ELECTRONICS CO LTD11 citations84
US7745290B2Jun 29, 2010

Methods of fabricating semiconductor device including fin-fet

SAMSUNG ELECTRONICS CO LTD15 citations83
US7723191B2May 25, 2010

Method of manufacturing semiconductor device having buried gate

SAMSUNG ELECTRONICS CO LTD14 citations83
US6808975B2Oct 26, 2004

Method for forming a self-aligned contact hole in a semiconductor device

SAMSUNG ELECTRONICS CO LTD14 citations83
US6097055AAug 1, 2000

Capacitor and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD18 citations83
US8372198B2Feb 12, 2013

Methods of forming dual damascene structures

SAMSUNG ELECTRONICS CO LTD10 citations82
US7326619B2Feb 5, 2008

Method of manufacturing integrated circuit device including recessed channel transistor

SAMSUNG ELECTRONICS CO LTD10 citations82
US7863137B2Jan 4, 2011

Methods of fabricating field effect transistors having protruded active regions

SAMSUNG ELECTRONICS CO LTD3 citations63
US7534704B2May 19, 2009

Thin layer structure and method of forming the same

SAMSUNG ELECTRONICS CO LTD5 citations61
US7531414B2May 12, 2009

Method of manufacturing integrated circuit device including recessed channel transistor

SAMSUNG ELECTRONICS CO LTD4 citations61
US7358126B2Apr 15, 2008

Dual damascene structure and methods of forming the same

SAMSUNG ELECTRONICS CO LTD3 citations61
US8378395B2Feb 19, 2013

Methods of fabricating field effect transistors having protruded active regions

SAMSUNG ELECTRONICS CO LTD0 citations52
US7655976B2Feb 2, 2010

Field effect transistors having protruded active regions and methods of fabricating such transistors

SAMSUNG ELECTRONICS CO LTD0 citations52
US6784097B2Aug 31, 2004

Method of manufacturing a semiconductor device with a self-aligned contact

SAMSUNG ELECTRONICS CO LTD0 citations52
US8361849B2Jan 29, 2013

Method of fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US7989279B2Aug 2, 2011

Method of fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US7531450B2May 12, 2009

Method of fabricating semiconductor device having contact hole with high aspect-ratio

SAMSUNG ELECTRONICS CO LTD0 citations51
US7929341B2Apr 19, 2011

Electromechanical switch and method of forming the same

SAMSUNG ELECTRONICS CO LTD1 citations49
US6861327B2Mar 1, 2005

Method for manufacturing gate spacer for self-aligned contact

SAMSUNG ELECTRONICS CO LTD1 citations42

SK HYNIX INC

2 patents

KIM MIN-SANG

2 patents

CHO KEUN-HWL

1 patent

KOREA ADVANCED INST SCI & TECH

1 patent

KWON YONG-HYUN

1 patent

HWANG JAE SEUNG

1 patent