Inventor
SEO JUN
KR32 patents
⚠️ This page may combine multiple inventors who share the name “SEO JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
24 patentsUS6239022B1May 29, 2001
Method of fabricating a contact in a semiconductor device
SAMSUNG ELECTRONICS CO LTD53 citations96
US7531449B2May 12, 2009
Method of forming fine patterns using double patterning process
SAMSUNG ELECTRONICS CO LTD29 citations92
US6573602B2Jun 3, 2003
Semiconductor device with a self-aligned contact and a method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD30 citations92
US7667221B2Feb 23, 2010
Phase change memory devices and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7524733B2Apr 28, 2009
Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7221023B2May 22, 2007
Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7745290B2Jun 29, 2010
Methods of fabricating semiconductor device including fin-fet
SAMSUNG ELECTRONICS CO LTD15 citations83
US7723191B2May 25, 2010
Method of manufacturing semiconductor device having buried gate
SAMSUNG ELECTRONICS CO LTD14 citations83
US6808975B2Oct 26, 2004
Method for forming a self-aligned contact hole in a semiconductor device
SAMSUNG ELECTRONICS CO LTD14 citations83
US6097055AAug 1, 2000
Capacitor and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD18 citations83
US8372198B2Feb 12, 2013
Methods of forming dual damascene structures
SAMSUNG ELECTRONICS CO LTD10 citations82
US7326619B2Feb 5, 2008
Method of manufacturing integrated circuit device including recessed channel transistor
SAMSUNG ELECTRONICS CO LTD10 citations82
US7863137B2Jan 4, 2011
Methods of fabricating field effect transistors having protruded active regions
SAMSUNG ELECTRONICS CO LTD3 citations63
US7534704B2May 19, 2009
Thin layer structure and method of forming the same
SAMSUNG ELECTRONICS CO LTD5 citations61
US7531414B2May 12, 2009
Method of manufacturing integrated circuit device including recessed channel transistor
SAMSUNG ELECTRONICS CO LTD4 citations61
US7358126B2Apr 15, 2008
Dual damascene structure and methods of forming the same
SAMSUNG ELECTRONICS CO LTD3 citations61
US8378395B2Feb 19, 2013
Methods of fabricating field effect transistors having protruded active regions
SAMSUNG ELECTRONICS CO LTD0 citations52
US7655976B2Feb 2, 2010
Field effect transistors having protruded active regions and methods of fabricating such transistors
SAMSUNG ELECTRONICS CO LTD0 citations52
US6784097B2Aug 31, 2004
Method of manufacturing a semiconductor device with a self-aligned contact
SAMSUNG ELECTRONICS CO LTD0 citations52
US8361849B2Jan 29, 2013
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US7989279B2Aug 2, 2011
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US7531450B2May 12, 2009
Method of fabricating semiconductor device having contact hole with high aspect-ratio
SAMSUNG ELECTRONICS CO LTD0 citations51
US7929341B2Apr 19, 2011
Electromechanical switch and method of forming the same
SAMSUNG ELECTRONICS CO LTD1 citations49
US6861327B2Mar 1, 2005
Method for manufacturing gate spacer for self-aligned contact
SAMSUNG ELECTRONICS CO LTD1 citations42