Inventor
LETTS EDWARD
US26 patents
⚠️ This page may combine multiple inventors who share the name “LETTS EDWARD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SIXPOINT MAT INC
14 patentsUS9790617B2Oct 17, 2017
Group III nitride bulk crystals and their fabrication method
SIXPOINT MAT INC6 citations84
US9441311B2Sep 13, 2016
Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
SIXPOINT MAT INC7 citations84
US9543393B2Jan 10, 2017
Group III nitride wafer and its production method
SIXPOINT MAT INC5 citations83
US9518340B2Dec 13, 2016
Method of growing group III nitride crystals
SIXPOINT MAT INC9 citations83
US10287709B2May 14, 2019
Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method
SIXPOINT MAT INC3 citations71
US10242868B1Mar 26, 2019
Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method
SIXPOINT MAT INC3 citations71
US9909230B2Mar 6, 2018
Seed selection and growth methods for reduced-crack group III nitride bulk crystals
SIXPOINT MAT INC4 citations71
US10161059B2Dec 25, 2018
Group III nitride bulk crystals and their fabrication method
SIXPOINT MAT INC0 citations52
US10087548B2Oct 2, 2018
High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal
SIXPOINT MAT INC0 citations52
US9985102B2May 29, 2018
Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth
SIXPOINT MAT INC0 citations52
US9834863B2Dec 5, 2017
Group III nitride bulk crystals and fabrication method
SIXPOINT MAT INC1 citations52
US10316431B2Jun 11, 2019
Method of growing group III nitride crystals
SIXPOINT MAT INC0 citations51
US9435051B2Sep 6, 2016
Bismuth-doped semi-insulating group III nitride wafer and its production method
SIXPOINT MAT INC1 citations51
US10354863B2Jul 16, 2019
Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method
SIXPOINT MAT INC0 citations50
SIXPOINT MATERIALS INC
6 patentsUS8357243B2Jan 22, 2013
Method for testing group III-nitride wafers and group III-nitride wafers with test data
SIXPOINT MATERIALS INC15 citations92
US8585822B2Nov 19, 2013
Method for testing group III-nitride wafers and group III-nitride wafers with test data
SIXPOINT MATERIALS INC7 citations84
US8557043B2Oct 15, 2013
Method for testing group III-nitride wafers and group III-nitride wafers with test data
SIXPOINT MATERIALS INC7 citations84
US9255342B2Feb 9, 2016
Bismuth-doped semi-insulating group III nitride wafer and its production method
SIXPOINT MATERIALS INC5 citations83
US9202872B2Dec 1, 2015
Method of growing group III nitride crystals
SIXPOINT MATERIALS INC8 citations83
US8921231B2Dec 30, 2014
Group III nitride wafer and its production method
SIXPOINT MATERIALS INC7 citations83
HASHIMOTO TADAO
4 patentsUS8420041B2Apr 16, 2013
High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal
HASHIMOTO TADAO17 citations92
US8236267B2Aug 7, 2012
High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal
HASHIMOTO TADAO19 citations92
US8764903B2Jul 1, 2014
Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
HASHIMOTO TADAO7 citations84
US9803293B2Oct 31, 2017
Method for producing group III-nitride wafers and group III-nitride wafers
HASHIMOTO TADAO2 citations73