Inventor

LIU BINGWU

US30 patents

⚠️ This page may combine multiple inventors who share the name “LIU BINGWU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIU BINGWU

GLOBALFOUNDRIES INC

Eliminating field oxide loss prior to FinFET source/drain epitaxial growth

Methods of forming replacement gate structures on semiconductor devices

Fin-type transistor structures with extended embedded stress elements and fabrication methods

Process for single diffusion break with simplified process

Semiconductor device having controlled final metal critical dimension

Devices and methods of forming unmerged epitaxy for FinFet device

Passive device structure and methods of making thereof

Devices and methods of forming unmerged epitaxy for FinFET device

Fabrication of nanowire field effect transistor structures

Fabrication methods facilitating integration of different device architectures

Single diffusion break with improved isolation and process window and reduced cost

Single-diffusion break structure for fin-type field effect transistors

FinFETs having gates parallel to fins

Methods for fabricating conductive vias of circuit structures

FinFET semiconductor structures and methods of fabricating same

Combination finFET/ultra-thin body transistor structure and methods of making such structures

Non-planar structure with extended exposed raised structures and same-level gate and spacers

Co-fabricated bulk devices and semiconductor-on-insulator devices

Metal-insulator-metal back end of line capacitor structures

Semiconductor structure having logic region and analog region

Semiconductor structure having FinFET ultra thin body and methods of fabrication thereof

Replacement gate structure on FinFET devices with reduced size fin in the channel region

Metal-insulator-metal back end of line capacitor structures

FinFET semiconductor structures and methods of fabricating same

Hardmask for a halo/extension implant of a static random access memory (SRAM) layout

GLOBALFOUNDRIES US INC

Stacked-gate transistors

Methods of forming an IC product comprising transistor devices with different threshold voltage levels

Methods of forming source/drain regions of a FinFET device and the resulting structures

Field-effect transistors with independently-tuned threshold voltages

MICRON TECHNOLOGY INC

Gate oxide formation for fin field-effect transistor